MJD127
Datasheet, Equivalent, Cross Reference Search
Type Designator: MJD127
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20
W
Maximum Collector-Base Voltage |Vcb|: 100
V
Maximum Collector-Emitter Voltage |Vce|: 100
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 8
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 4
MHz
Collector Capacitance (Cc): 300
pF
Forward Current Transfer Ratio (hFE), MIN: 6000
Noise Figure, dB: -
Package:
TO251
MJD127
Datasheet (PDF)
..1. Size:284K motorola
mjd122re mjd127.pdf 
Order this documentMOTOROLAby MJD122/DSEMICONDUCTOR TECHNICAL DATANPN*MJD122Complementary DarlingtonPNPMJD127*Power TransistorsDPAK For Surface Mount Applications*Motorola Preferred DeviceDesigned for general purpose amplifier and low speed switching applications.SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)POWER TRANSISTORS
..2. Size:93K st
mjd122 mjd127.pdf
MJD122MJD127COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLELCOLLECTOR- EMITTER DIODE SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN TAPE & REEL(SUFFIX T4)3 ELECTRICAL SIMILAR TO TIP122 ANDTIP1271APPLICATIONS GENERAL PURPOSE SWITCHING ANDDPAKAMPLIFIER.TO-252(Suffix
..3. Size:201K lge
mjd127.pdf
MJD127(NPN)TO-251/TO-252-2L TransistorTO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP127 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -100 VVCEO Collector-Emitter Voltage -100 VVEBO Emitter-B
0.1. Size:205K onsemi
mjd127g.pdf
MJD122,NJVMJD122T4G (NPN), MJD127 (PNP)Complementary DarlingtonPower Transistorhttp://onsemi.comDPAK For Surface Mount ApplicationsSILICONDesigned for general purpose amplifier and low speed switchingPOWER TRANSISTORapplications.8 AMPERES100 VOLTS, 20 WATTSFeatures Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements for 2N
0.2. Size:205K onsemi
mjd127t4g.pdf
MJD122,NJVMJD122T4G (NPN), MJD127 (PNP)Complementary DarlingtonPower Transistorhttp://onsemi.comDPAK For Surface Mount ApplicationsSILICONDesigned for general purpose amplifier and low speed switchingPOWER TRANSISTORapplications.8 AMPERES100 VOLTS, 20 WATTSFeatures Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements for 2N
0.3. Size:142K onsemi
njvmjd122 njvmjd127.pdf
MJD122, NJVMJD122(NPN), MJD127,NJVMJD127 (PNP)Complementary DarlingtonPower Transistorhttp://onsemi.comDPAK For Surface Mount ApplicationsSILICONDesigned for general purpose amplifier and low speed switchingPOWER TRANSISTORapplications.8 AMPERES100 VOLTS, 20 WATTSFeatures Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements
0.4. Size:977K slkor
mjd127d.pdf
MJD127DSilicon PNP Darlington Power TransistorDESCRIPTIONLow Collector-Emitter saturation voltageLead formed for surface mount applicationsHigh DC current gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.ABSOLUTE MAXI
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