MJD127 Specs and Replacement

Type Designator: MJD127

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 300 pF

Forward Current Transfer Ratio (hFE), MIN: 6000

Noise Figure, dB: -

Package: TO251

 MJD127 Substitution

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MJD127 datasheet

 ..1. Size:284K  motorola

mjd122re mjd127.pdf pdf_icon

MJD127

Order this document MOTOROLA by MJD122/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD122 Complementary Darlington PNP MJD127* Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS... See More ⇒

 ..2. Size:93K  st

mjd122 mjd127.pdf pdf_icon

MJD127

MJD122 MJD127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 ) 3 ELECTRICAL SIMILAR TO TIP122 AND TIP127 1 APPLICATIONS GENERAL PURPOSE SWITCHING AND DPAK AMPLIFIER. TO-252 (Suffix ... See More ⇒

 ..3. Size:201K  lge

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MJD127

MJD127(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP127 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-B... See More ⇒

 0.1. Size:205K  onsemi

mjd127g.pdf pdf_icon

MJD127

MJD122, NJVMJD122T4G (NPN), MJD127 (PNP) Complementary Darlington Power Transistor http //onsemi.com DPAK For Surface Mount Applications SILICON Designed for general purpose amplifier and low speed switching POWER TRANSISTOR applications. 8 AMPERES 100 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements for 2N... See More ⇒

Detailed specifications: MJD112-1, MJD112T4, MJD117, MJD117-1, MJD117T4, MJD122, MJD122-1, MJD122T4, 2N2907, MJD127-1, MJD127T4, MJD13003, MJD148, MJD200, MJD200-1, MJD210, MJD210-1

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