MJD210T4 Specs and Replacement
Type Designator: MJD210T4
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 12.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 65 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO252
- BJT ⓘ Cross-Reference Search
MJD210T4 datasheet
0.1. Size:183K onsemi
mjd210t4g.pdf 
MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface http //onsemi.com Mount Applications Designed for low voltage, low-power, high-gain audio SILICON amplifier applications. POWER TRANSISTORS Features 5 AMPERES Collector-Emitter Sustaining Voltage - 25 VOLTS, 12.5 WATTS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc ... See More ⇒
8.1. Size:236K motorola
mjd200re mjd210.pdf
Order this document MOTOROLA by MJD200/D SEMICONDUCTOR TECHNICAL DATA NPN MJD200 Complementary PNP Plastic Power Transistors MJD210 NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low power, high gain audio amplifier applications. SILICON POWER TRANSISTORS Collector Emitter Sustaining Voltage 5 AMPERES VCEO(sus) = 25 Vdc (Min) @ ... See More ⇒
8.2. Size:48K st
mjd200 mjd210.pdf
MJD200 MJD210 COMPLEMENTARY SILICON POWER TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4) APPLICATIONS 3 AUDIO AMPLIFIERS 1 DESCRIPTION The MJD200 is an Epitaxial-Base NPN transistor designed for low voltage, low power, high gain, DPAK audio amplifier applications. TO-252 Th... See More ⇒
8.3. Size:46K fairchild semi
mjd210.pdf
MJD210 D-PAK for Surface Mount Applications High DC Current Gain Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix) D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VC... See More ⇒
8.4. Size:183K onsemi
mjd210g.pdf
MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface http //onsemi.com Mount Applications Designed for low voltage, low-power, high-gain audio SILICON amplifier applications. POWER TRANSISTORS Features 5 AMPERES Collector-Emitter Sustaining Voltage - 25 VOLTS, 12.5 WATTS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc ... See More ⇒
8.5. Size:142K onsemi
njvmjd210 mjd200.pdf
MJD200 (NPN), MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface http //onsemi.com Mount Applications Designed for low voltage, low-power, high-gain audio SILICON amplifier applications. POWER TRANSISTORS Features 5 AMPERES High DC Current Gain 25 VOLTS, 12.5 WATTS Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix... See More ⇒
8.6. Size:242K onsemi
mjd200 mjd210.pdf
Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications MJD200 (NPN), MJD210 (PNP) www.onsemi.com Designed for low voltage, low-power, high-gain audio amplifier applications. SILICON POWER TRANSISTORS Features High DC Current Gain 5 AMPERES Lead Formed for Surface Mount Applications in Plastic Sleeves 25 VOLTS, 12.5 WATTS (No Suffix) ... See More ⇒
8.7. Size:183K onsemi
mjd210rlg.pdf
MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface http //onsemi.com Mount Applications Designed for low voltage, low-power, high-gain audio SILICON amplifier applications. POWER TRANSISTORS Features 5 AMPERES Collector-Emitter Sustaining Voltage - 25 VOLTS, 12.5 WATTS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc ... See More ⇒
8.8. Size:203K utc
mjd210.pdf
UNISONIC TECHNOLOGIES CO., LTD MJD210 PNP SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 1 DESCRIPTION TO-252 The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE 1 *Collector-Emitter Sustaining Voltage TO-251 VCEO(SUS) =-25V (Min) @ IC =-10mA *High DC Current Gain hFE =70 (Min) @ IC=-500mA =4... See More ⇒
8.9. Size:206K inchange semiconductor
mjd210.pdf
isc Silicon PNP Power Transistor MJD210 DESCRIPTION High DC Current Gain- h = 70(Min) @ I = -0.5A FE C Low Collector Saturation Voltage- V = -0.3V(Max.)@ I = -0.5 A CE(sat) C Complement to the NPN MJD200 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage, low -power ,high-gain audio amplifier applic... See More ⇒
Detailed specifications: MJD127-1, MJD127T4, MJD13003, MJD148, MJD200, MJD200-1, MJD210, MJD210-1, TIP120, MJD243, MJD243-1, MJD243T4, MJD2955, MJD2955-1, MJD2955T4, MJD3055, MJD3055-1
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