MJD31-1 PDF and Equivalents Search

 8.1. Size:184K  fairchild semi

 mjd31-c.pdf

November 2010 MJD31/31C NPN Epitaxial Silicon Transistor Features General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) D-PAK I-PAK 11 Electrically Similar to Popular TIP31 and TIP31C 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta=25 C unless otherwise n... See More ⇒

 8.2. Size:129K  onsemi

 mjd31-c mjd32-c.pdf

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 9.1. Size:205K  motorola

 mjd31 mjd32.pdf

Order this document MOTOROLA by MJD31/D SEMICONDUCTOR TECHNICAL DATA NPN MJD31,C* Complementary Power PNP MJD32,C* Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS Straig... See More ⇒

 9.2. Size:383K  st

 mjd31c.pdf

MJD31C Low voltage NPN power transistor Datasheet - production data Features Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology with base island layout. The resulting transistor Fig... See More ⇒

 9.3. Size:74K  st

 mjd31 mjd32.pdf

MJD31B/31C MJD32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 ) ELECTRICAL SIMILAR TO TIP31B/C AND TIP32B/C 3 APPLICATIONS GENERAL PURPOSE SWITCHING AND 1 AMPLIFIER TRANSISTORS DESCRIPTION DPAK The MJD31B and MJD31C and the MJD32B TO-252 and MJD32C form complementa... See More ⇒

 9.4. Size:401K  st

 mjd31ct4-a.pdf

MJD31CT4-A Low voltage NPN power transistor Datasheet - production data Features This device is qualified for automotive application TAB Surface-mounting TO-252 power package in tape and reel 3 Complementary to the PNP type MJD32C 1 Application DPAK General purpose linear and switching TO-252 equipment Description Figure 1. Internal schematic diagram The dev... See More ⇒

 9.5. Size:49K  fairchild semi

 mjd31c.pdf

MJD31/31C General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP31 and TIP31C D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Uni... See More ⇒

 9.6. Size:225K  nxp

 mjd31c.pdf

MJD31C 100 V, 3 A NPN high power bipolar transistor 12 September 2019 Product data sheet 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement MJD32C 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electric... See More ⇒

 9.7. Size:226K  nxp

 mjd31ca.pdf

MJD31CA 100 V, 3 A NPN high power bipolar transistor 12 September 2019 Product data sheet 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement MJD32CA 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electr... See More ⇒

 9.8. Size:367K  diodes

 mjd31c.pdf

MJD31C 100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Features Mechanical Data BVCEO > 100V Case TO252 (DPAK) IC = 3A high Continuous Collector Current Case Material Molded Plastic, "Green" Molding Compound ICM = 5A Peak Pulse Current UL Flammability Classification Rating 94V-0 Ideal for Power Switching or Amplification Applications Moisture Sensitivity Lev... See More ⇒

 9.9. Size:305K  diodes

 mjd31cq.pdf

MJD31CQ 100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Description Mechanical Data Case TO252 (DPAK) This Bipolar Junction Transistor (BJT) has been designed to meet the Case Material Molded Plastic, "Green" Molding Compound stringent requirements of Automotive Applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity Level 1 per J-STD-020 Ter... See More ⇒

 9.10. Size:253K  onsemi

 mjd31 mjd32.pdf

DATA SHEET www.onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS MJD31 (NPN), MJD32 (PNP) COMPLEMENTARY Designed for general purpose amplifier and low speed switching applications. COLLECTOR COLLECTOR 2,4 2,4 Features Lead Formed for Surface Mount Applications in Plastic Sleeves 1 1 ... See More ⇒

 9.11. Size:176K  onsemi

 mjd31ct4g.pdf

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl... See More ⇒

 9.12. Size:135K  onsemi

 mjd31 njvmjd31t4g mjd31c njvmjd31ct4g mjd32 njvmjd32t4g mjd32c njvmjd32cg njvmjd32ct4g.pdf

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 9.13. Size:140K  onsemi

 njvmjd31 njvmjd32.pdf

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 9.14. Size:176K  onsemi

 mjd31c1g.pdf

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl... See More ⇒

 9.15. Size:176K  onsemi

 mjd31t4g.pdf

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl... See More ⇒

 9.16. Size:176K  onsemi

 mjd31crlg.pdf

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl... See More ⇒

 9.17. Size:132K  onsemi

 njvmjd31ct4g-vf01 njvmjd32ct4g-vf01.pdf

NJVMJD3xxT4G-VF01 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching www.onsemi.com applications. Features SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves POWER TRANSISTORS Straight Lead Version in Plastic Sleeves ( 1 Suffix) 3 AMPERES Lead Formed Version in 16 mm ... See More ⇒

 9.18. Size:176K  onsemi

 mjd31cg.pdf

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl... See More ⇒

 9.19. Size:72K  secos

 mjd31c.pdf

MJD31C 3A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES D-Pack (TO-252) Designed for general Excellent DC Current Gain Characteristics A PACKAGE INFORMATION C B D Package MPQ Leader Size TO-252 2.5K 13 inch G E K H F N O P M J Collector 2 Millimete... See More ⇒

 9.20. Size:2786K  jiangsu

 mjd31c.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252-2L MJD31C TRANSISTOR (NPN) FEA TURES 1.BASE Designed for General Purpose Amplifier and Low Speed Switching Applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) 2.COLLECTOR Straight Lead Version in Plastic Sleeves ( 1 Suffix) ... See More ⇒

 9.21. Size:242K  lge

 mjd31c.pdf

MJD31C(NPN) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ( 1 Suffix) Lead Formed Version in 16 mm Tape and Reel ( T4 Suffix) TO-25... See More ⇒

 9.22. Size:231K  first silicon

 mjd31c.pdf

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 9.23. Size:250K  inchange semiconductor

 mjd31c.pdf

isc Silicon NPN Power Transistors MJD31C DESCRIPTION DC Current Gain -h = 25(Min)@ I = 1A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR) CEO Complement to Type MJD32C DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and low spee... See More ⇒