MJD32CT4 Specs and Replacement
Type Designator: MJD32CT4
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO252
MJD32CT4 Substitution
- BJT ⓘ Cross-Reference Search
MJD32CT4 datasheet
MJD32CT4-A Automotive-grade low voltage PNP power transistor Datasheet - production data Features AEC-Q101 qualified Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31CT4-A 3 Applications 1 General purpose linear and switching DPAK equipment Description The device is manufactured in planar technology Figure 1. Inte... See More ⇒
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) http //onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 3 AMPERES DPAK For Surface Mount Applications 40 AND 100 VOLTS 15 WATTS Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Appl... See More ⇒
mjd31 njvmjd31t4g mjd31c njvmjd31ct4g mjd32 njvmjd32t4g mjd32c njvmjd32cg njvmjd32ct4g.pdf 
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njvmjd31ct4g-vf01 njvmjd32ct4g-vf01.pdf
NJVMJD3xxT4G-VF01 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching www.onsemi.com applications. Features SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves POWER TRANSISTORS Straight Lead Version in Plastic Sleeves ( 1 Suffix) 3 AMPERES Lead Formed Version in 16 mm ... See More ⇒
Detailed specifications: MJD31C, MJD31C-1, MJD31CT4, MJD31T4, MJD32, MJD32-1, MJD32C, MJD32C-1, C5198, MJD32T4, MJD340, MJD340-1, MJD340T4, MJD350, MJD350-1, MJD350T4, MJD41C
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