MJD42C-1 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJD42C-1
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO252
MJD42C-1 Transistor Equivalent Substitute - Cross-Reference Search
MJD42C-1 Datasheet (PDF)
mjd41c mjd42c.pdf
Order this documentMOTOROLAby MJD41C/DSEMICONDUCTOR TECHNICAL DATANPNMJD41C*Complementary PowerPNPMJD42C*TransistorsDPAK For Surface Mount Applications*Motorola Preferred DeviceDesigned for general purpose amplifier and low speed switching applications.SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)POWER TRANSISTORS Straigh
njvmjd41c njvmjd42c.pdf
MJD41C,NJVMJD41CT4G (NPN),MJD42C,NJVMJD42CT4G,NJVMJD42CRLG (PNP)http://onsemi.comComplementary PowerTransistorsSILICONDPAK For Surface Mount Applications POWER TRANSISTORS6 AMPERESDesigned for general purpose amplifier and low speed switching100 VOLTS, 20 WATTSapplications.Features Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix) S
mjd42crlg.pdf
MJD41C,NJVMJD41CT4G (NPN),MJD42C,NJVMJD42CT4G,NJVMJD42CRLG (PNP)http://onsemi.comComplementary PowerTransistorsSILICONDPAK For Surface Mount Applications POWER TRANSISTORS6 AMPERESDesigned for general purpose amplifier and low speed switching100 VOLTS, 20 WATTSapplications.Features Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix) S
mjd42cg.pdf
MJD41C,NJVMJD41CT4G (NPN),MJD42C,NJVMJD42CT4G,NJVMJD42CRLG (PNP)http://onsemi.comComplementary PowerTransistorsSILICONDPAK For Surface Mount Applications POWER TRANSISTORS6 AMPERESDesigned for general purpose amplifier and low speed switching100 VOLTS, 20 WATTSapplications.Features Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix) S
mjd42c1g.pdf
MJD41C,NJVMJD41CT4G (NPN),MJD42C,NJVMJD42CT4G,NJVMJD42CRLG (PNP)http://onsemi.comComplementary PowerTransistorsSILICONDPAK For Surface Mount Applications POWER TRANSISTORS6 AMPERESDesigned for general purpose amplifier and low speed switching100 VOLTS, 20 WATTSapplications.Features Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix) S
mjd42ct4g.pdf
MJD41C (NPN)MJD42C (PNP)Preferred Device Complementary PowerTransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchingapplications.SILICONFeaturesPOWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves6 AMPERES(No Suffix)100 VOLTS, 20 WATTS Straight Lead Version in Plastic Sleeves (1
mjd41c mjd42c.pdf
MJD41C (NPN),MJD42C (PNP)Complementary PowerTransistorsDPAK for Surface Mount Applicationswww.onsemi.comDesigned for general purpose amplifier and low speed switchingapplications.SILICONFeaturesPOWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves6 AMPERES(No Suffix)100 VOLTS, 20 WATTS Straight Lead Version in Plastic Sleeves (1
mjd42c.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors MJD42C TRANSISTOR (PNP)TO-252-2LFEATURES Designed for General Purpose Amplifier and Low SpeedSwitching Applications.1.BASE Lead Formed for Surface Mount Applications in Plastic22.COLLECTORSleeves (No Suffix)133.EMITTER Straight Lead Version in Plastic Sleeves (1 Su
mjd42c.pdf
MJD42C(PNP)TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (1 Suffix) TO-252-2L Lead Formed Version in 16 mm Tape and Reel (T4 S
mjd42c.pdf
MJD42C Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features MJD41C Complement to MJD41C. / Applications Medium power linear switching applications. / Equivalent Circuit /
mjd42c.pdf
isc Silicon PNP Power Transistors MJD42CDESCRIPTIONDC Current Gain -h = 30(Min)@ I = -0.3AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Complement to Type MJD41CDPAK for Surface Mount ApplicationsMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for use in general purpose amplifer and low
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
