All Transistors. MJD45H11 Datasheet

 

MJD45H11 Datasheet and Replacement


   Type Designator: MJD45H11
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 230 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO251
 

 MJD45H11 Substitution

   - BJT ⓘ Cross-Reference Search

   

MJD45H11 Datasheet (PDF)

 ..1. Size:192K  motorola
mjd44h11 mjd45h11.pdf pdf_icon

MJD45H11

Order this documentMOTOROLAby MJD44H11/DSEMICONDUCTOR TECHNICAL DATANPN*MJD44H11Complementary PowerPNPMJD45H11 *TransistorsDPAK For Surface Mount Applications*Motorola Preferred Device. . . for general purpose power and switching such as output or driver stages inSILICONapplications such as switching regulators, converters, and power amplifiers.POWER TRANSISTORS

 ..2. Size:395K  st
mjd44h11 mjd45h11.pdf pdf_icon

MJD45H11

MJD44H11, MJD45H11Complementary power transistorsDatasheet - production data .Features Low collector-emitter saturation voltageTAB Fast switching speed 2 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4")31ApplicationsDPAKTO-252 Power amplifier Switching circuitsDescriptionFigure 1. Internal schematic diagramThese d

 ..3. Size:158K  fairchild semi
mjd45h11.pdf pdf_icon

MJD45H11

April 2010MJD45H11PNP Epitaxial Silicon TransistorApplications General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount ApplicationsFeatures Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK: -I Suffix) Electrically Similar to Popular MJE45HD-PAK I-PAK11 Fast Switching Spe

 ..4. Size:236K  nxp
mjd45h11.pdf pdf_icon

MJD45H11

MJD45H1180 V, 8 A PNP high power bipolar transistor12 September 2019 Product data sheet1. General descriptionPNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device(SMD) plastic package.NPN complement: MJD44H112. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Elect

Datasheet: MJD41C-1 , MJD41CT4 , MJD42C , MJD42C-1 , MJD42CT4 , MJD44H11 , MJD44H11-1 , MJD44H11T4 , 2SC2073 , MJD45H11-1 , MJD45H11T4 , MJD47 , MJD47-1 , MJD47T4 , MJD50 , MJD50-1 , MJD50T4 .

History: 2SC1330 | ET4060 | NPS706A | SGSD93F | NR421DH | SFT320 | 2SC1403A

Keywords - MJD45H11 transistor datasheet

 MJD45H11 cross reference
 MJD45H11 equivalent finder
 MJD45H11 lookup
 MJD45H11 substitution
 MJD45H11 replacement

 

 
Back to Top

 


 
.