MJD45H11T4 Datasheet and Replacement
Type Designator: MJD45H11T4
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 230 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO252
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MJD45H11T4 Datasheet (PDF)
mjd44h11t4a mjd45h11t4a.pdf
MJD44H11T4-AMJD45H11T4-AComplementary power transistors .Features The devices are qualified for automotive applicationTAB2 Low collector-emitter saturation voltage Fast switching speed3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1DPAKApplicationsTO-252 Power amplifier Switching circuitsFigure 1. Internal sche
mjd45h11t4-a.pdf
MJD44H11T4-AMJD45H11T4-AComplementary power transistors .Features The devices are qualified for automotive applicationTAB2 Low collector-emitter saturation voltage Fast switching speed3 Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") 1DPAKApplicationsTO-252 Power amplifier Switching circuitsFigure 1. Internal sche
mjd45h11t4g.pdf
MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SC5890 | 2SB1188SQ-R | 2SC4517 | 3DF5 | 3DG2274K | DTA144WET1G | BCP54-10HE3
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History: 2SC5890 | 2SB1188SQ-R | 2SC4517 | 3DF5 | 3DG2274K | DTA144WET1G | BCP54-10HE3
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