MJE1291 Specs and Replacement
Type Designator: MJE1291
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO126
MJE1291 Substitution
- BJT ⓘ Cross-Reference Search
MJE1291 datasheet
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE12007 DESCRIPTION With TO-220 package High voltage Low saturation voltage APPLICATIONS Suited for line-operated switchmode applications such as Fluorescent lamp ballasts Inverters Solenoid and relay drivers Motor controls Deflection circuits PINNING PIN DESCRIPTION 1 B... See More ⇒
Detailed specifications: MJE1092, MJE1093, MJE1100, MJE1101, MJE1102, MJE1103, MJE12007, MJE1290, 2SB817, MJE13002, MJE13003, MJE13004, MJE13005, MJE13006, MJE13007, MJE13007A, MJE13008
Keywords - MJE1291 pdf specs
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