All Transistors. MJE1291 Datasheet

 

MJE1291 Datasheet and Replacement


   Type Designator: MJE1291
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO126
 

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MJE1291 Datasheet (PDF)

 9.1. Size:118K  inchange semiconductor
 mje12007.pdf pdf_icon

MJE1291

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE12007 DESCRIPTION With TO-220 package High voltage Low saturation voltage APPLICATIONS Suited for line-operated switchmode applications such as: Fluorescent lamp ballasts Inverters Solenoid and relay drivers Motor controls Deflection circuits PINNING PIN DESCRIPTION1 B

Datasheet: MJE1092 , MJE1093 , MJE1100 , MJE1101 , MJE1102 , MJE1103 , MJE12007 , MJE1290 , 2N4401 , MJE13002 , MJE13003 , MJE13004 , MJE13005 , MJE13006 , MJE13007 , MJE13007A , MJE13008 .

History: 2N772 | SFT357 | CSD669AC | BD135-6 | 2SC3193 | KSA1203Y | GD242

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