All Transistors. MJE15029 Datasheet

 

MJE15029 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJE15029
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO220

 MJE15029 Transistor Equivalent Substitute - Cross-Reference Search

   

MJE15029 Datasheet (PDF)

 ..1. Size:223K  onsemi
mje15028 mje15030 mje15029 mje15031.pdf

MJE15029
MJE15029

MJE15028, MJE15030 (NPN),MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant*120-

 ..2. Size:172K  cn sptech
mje15029.pdf

MJE15029
MJE15029

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor MJE15029DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = -0.5AT CDC current gain -: h = 40 (Min) @I = -3.0 AFE C: h = 20 (Min) @I = -4.0 AFE CComplement to Type MJE15028APPLICATIONSDesigned for use as highfre

 ..3. Size:213K  inchange semiconductor
mje15029.pdf

MJE15029
MJE15029

isc Silicon PNP Power Transistor MJE15029DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = -0.5AT CDC current gain -: h = 40 (Min) @I = -3.0 AFE C: h = 20 (Min) @I = -4.0 AFE CComplement to Type MJE15028Minimum Lot-to-Lot variations for robust deviceperformance and reliable ope

 0.1. Size:178K  onsemi
mje15029g.pdf

MJE15029
MJE15029

MJE15028, MJE15030 (NPN)MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE DC Current Gain Specified to 4.0 APOWER TRANSISTORShFE = 40 (Min) @ IC = 3.0 AdcCOMPLEMENTARY SILICON= 20 (Min) @ IC = 4.0 Adc120-150 VOLTS, 50 WATTS Coll

 7.1. Size:217K  motorola
mje15028-31 mje15028.pdf

MJE15029
MJE15029

Order this documentMOTOROLAby MJE15028/DSEMICONDUCTOR TECHNICAL DATANPN*MJE15028Complementary Silicon PlasticMJE15030*Power TransistorsPNP*MJE15029. . . designed for use as highfrequency drivers in audio amplifiers. DC Current Gain Specified to 4.0 AmpereshFE = 40 (Min) @ IC = 3.0 Adc *MJE15031hFE = 20 (Min) @ IC = 4.0 Adc*Motorola Preferred Device

 7.2. Size:178K  onsemi
mje15028g.pdf

MJE15029
MJE15029

MJE15028, MJE15030 (NPN)MJE15029, MJE15031 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use as high-frequency drivers inaudio amplifiers. http://onsemi.comFeatures8 AMPERE DC Current Gain Specified to 4.0 APOWER TRANSISTORShFE = 40 (Min) @ IC = 3.0 AdcCOMPLEMENTARY SILICON= 20 (Min) @ IC = 4.0 Adc120-150 VOLTS, 50 WATTS Coll

 7.3. Size:163K  cdil
mje15028 29 30 31.pdf

MJE15029
MJE15029

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package MJE15028, MJE15030MJE15029, MJE15031MJE15028, 15030 NPN PLASTIC POWER TRANSISTORSMJE15029, 15031 PNP PLASTIC POWER TRANSISTORSHigh frequency Drivers in Audio AmplifiersPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.EB

 7.4. Size:174K  cn sptech
mje15028.pdf

MJE15029
MJE15029

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor MJE15028DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = 0.5AT CDC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJE15029APPLICATIONSDesigned for use as highfreque

 7.5. Size:211K  inchange semiconductor
mje15028.pdf

MJE15029
MJE15029

isc Silicon NPN Power Transistor MJE15028DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High Current Gain-Bandwidth Product-: f = 30MHz(Min)@ I = 0.5AT CDC current gain -: h = 40 (Min) @I = 3.0 AFE C: h = 20 (Min) @I = 4.0 AFE CComplement to Type MJE15029Minimum Lot-to-Lot variations for robust deviceperformance and reliable operat

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
Back to Top