MJE15029 Specs and Replacement

Type Designator: MJE15029

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO220

 MJE15029 Substitution

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MJE15029 datasheet

 ..1. Size:223K  onsemi

mje15028 mje15030 mje15029 mje15031.pdf pdf_icon

MJE15029

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features 8 AMPERE High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant* 120-... See More ⇒

 ..2. Size:172K  cn sptech

mje15029.pdf pdf_icon

MJE15029

SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJE15029 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = -0.5A T C DC current gain - h = 40 (Min) @I = -3.0 A FE C h = 20 (Min) @I = -4.0 A FE C Complement to Type MJE15028 APPLICATIONS Designed for use as high fre... See More ⇒

 ..3. Size:213K  inchange semiconductor

mje15029.pdf pdf_icon

MJE15029

isc Silicon PNP Power Transistor MJE15029 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = -0.5A T C DC current gain - h = 40 (Min) @I = -3.0 A FE C h = 20 (Min) @I = -4.0 A FE C Complement to Type MJE15028 Minimum Lot-to-Lot variations for robust device performance and reliable ope... See More ⇒

 0.1. Size:178K  onsemi

mje15029g.pdf pdf_icon

MJE15029

MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features 8 AMPERE DC Current Gain Specified to 4.0 A POWER TRANSISTORS hFE = 40 (Min) @ IC = 3.0 Adc COMPLEMENTARY SILICON = 20 (Min) @ IC = 4.0 Adc 120-150 VOLTS, 50 WATTS Coll... See More ⇒

Detailed specifications: MJE13007, MJE13007A, MJE13008, MJE13009, MJE13070, MJE13071, MJE1320, MJE15028, 2SC2240, MJE15030, MJE15031, MJE16002, MJE16004, MJE16106, MJE16204, MJE1660, MJE1661

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