All Transistors. MJE18004 Datasheet

 

MJE18004 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJE18004
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 13 MHz
   Collector Capacitance (Cc): 65 pF
   Forward Current Transfer Ratio (hFE), MIN: 14
   Noise Figure, dB: -
   Package: TO220

 MJE18004 Transistor Equivalent Substitute - Cross-Reference Search

   

MJE18004 Datasheet (PDF)

 ..1. Size:422K  motorola
mje18004.pdf

MJE18004
MJE18004

Order this documentMOTOROLAby MJE18004/DSEMICONDUCTOR TECHNICAL DATADesigner's Data Sheet*MJE18004SWITCHMODE*MJF18004NPN Bipolar Power Transistor*Motorola Preferred DeviceFor Switching Power Supply ApplicationsPOWER TRANSISTORThe MJE/MJF18004 have an applications specific stateoftheart die designed5.0 AMPERESfor use in 220 V line operated Switchmod

 ..2. Size:340K  onsemi
mje18004 mjf18004.pdf

MJE18004
MJE18004

MJE18004, MJF18004Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18004 have an applications specific state-of-the-artdie designed for use in 220 V line-operated switch-mode Powerwww.onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:5.0 AMPERES Hi

 ..3. Size:216K  inchange semiconductor
mje18004.pdf

MJE18004
MJE18004

isc Silicon NPN Power Transistor MJE18004DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 0.1. Size:233K  onsemi
mje18004d2.pdf

MJE18004
MJE18004

MJE18004D2GHigh Speed, High GainBipolar NPN PowerTransistorwith Integrated Collector-Emitter Diodeand Built-in Efficient Antisaturation http://onsemi.comNetworkPOWER TRANSISTORSThe MJE18004D2 is state-of-art High Speed High gain BIPolar5 AMPERES,transistor (H2BIP). High dynamic characteristics and lot to lotminimum spread (150 ns on storage time) make it ideally suitable

 0.2. Size:247K  onsemi
mje18004g.pdf

MJE18004
MJE18004

MJE18004G, MJF18004GSWITCHMODENPN Bipolar Power TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18004G have an applications specific state-of-the-artdie designed for use in 220 V line-operated SWITCHMODE Powerhttp://onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:5.0 AMPERES

 7.1. Size:433K  motorola
mje18009.pdf

MJE18004
MJE18004

Order this documentMOTOROLAby MJE18009/DSEMICONDUCTOR TECHNICAL DATAMJE18009Designer's Data SheetMJF18009SWITCHMODE NPN SiliconPlanar Power TransistorPOWER TRANSISTORSThe MJE/MJF18009 has an application specific stateoftheart die designed for10 AMPERESuse in 220 V lineoperated Switchmode Power supplies and electronic ballast (light1000 VOLTSballa

 7.2. Size:421K  motorola
mje18008.pdf

MJE18004
MJE18004

Order this documentMOTOROLAby MJE18008/DSEMICONDUCTOR TECHNICAL DATA*MJE18008Designer's Data Sheet*MJF18008SWITCHMODE*Motorola Preferred DeviceNPN Bipolar Power TransistorFor Switching Power Supply ApplicationsPOWER TRANSISTOR8.0 AMPERESThe MJE/MJF18008 have an applications specific stateoftheart die designed1000 VOLTSfor use in 220 V lineoper

 7.3. Size:415K  motorola
mje18006.pdf

MJE18004
MJE18004

Order this documentMOTOROLAby MJE18006/DSEMICONDUCTOR TECHNICAL DATA*MJE18006Designer's Data Sheet*MJF18006SWITCHMODE*Motorola Preferred DeviceNPN Bipolar Power TransistorFor Switching Power Supply ApplicationsPOWER TRANSISTOR6.0 AMPERESThe MJE/MJF18006 have an applications specific stateoftheart die designed1000 VOLTSfor use in 220 V lineoper

 7.4. Size:254K  motorola
mje18002.pdf

MJE18004
MJE18004

Order this documentMOTOROLAby MJE18002/DSEMICONDUCTOR TECHNICAL DATADesigner's Data SheetMJE18002*SWITCHMODEMJF18002*NPN Bipolar Power Transistor*Motorola Preferred DeviceFor Switching Power Supply ApplicationsThe MJE/MJF18002 have an applications specific stateoftheart die designed POWER TRANSISTORfor use in 220 V line operated Switchmode Power supplies a

 7.5. Size:341K  onsemi
mje18008.pdf

MJE18004
MJE18004

DATA SHEETwww.onsemi.comSwitch-mode NPN BipolarPOWER TRANSISTORPower Transistor8.0 AMPERES1000 VOLTSFor Switching Power Supply Applications 45 and 125 WATTSCOLLECTORMJE180082,4The MJE18008 have an applications specific state-of-the-art diedesigned for use in 220 V line-operated switch-mode Power supplies1and electronic light ballasts. BASEFeatures3EMITTER

 7.6. Size:202K  onsemi
mje18006-d.pdf

MJE18004
MJE18004

MJE18006GSWITCHMODEtNPN Bipolar Power TransistorFor Switching Power Supply ApplicationsThe MJE18006G has an applications specific state-of-the-art diehttp://onsemi.comdesigned for use in 220 V line-operated SWITCHMODE Powersupplies and electronic light ballasts.POWER TRANSISTORFeatures6.0 AMPERES Improved Efficiency Due to Low Base Drive Requirements:1000 VOLTS - 100

 7.7. Size:155K  onsemi
mje18002.pdf

MJE18004
MJE18004

MJE18002GSWITCHMODEtNPN Bipolar Power TransistorFor Switching Power Supply ApplicationsThe MJE18002G have an applications specific state-of-the-art diehttp://onsemi.comdesigned for use in 220 V line operated Switchmode Power suppliesand electronic light ballasts.POWER TRANSISTORFeatures2.0 AMPERES Improved Efficiency Due to Low Base Drive Requirements:100 VOLTS - 50 W

 7.8. Size:145K  onsemi
mje18008g.pdf

MJE18004
MJE18004

MJE18008, MJF18008Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18008 have an applications specific state-of-the-artdie designed for use in 220 V line-operated switch-mode Powerwww.onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:8.0 AMPERES Hi

 7.9. Size:139K  onsemi
mje18008 mjf18008.pdf

MJE18004
MJE18004

MJE18008, MJF18008Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18008 have an applications specific state-of-the-artdie designed for use in 220 V line-operated switch-mode Powerwww.onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:8.0 AMPERES Hi

 7.10. Size:94K  jmnic
mje18008.pdf

MJE18004
MJE18004

Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18008 DESCRIPTION With TO-220C package High voltage ,high speed Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PI

 7.11. Size:95K  jmnic
mje18006.pdf

MJE18004
MJE18004

Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18006 DESCRIPTION With TO-220C package High voltage ,high speed Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PI

 7.12. Size:216K  inchange semiconductor
mje18008.pdf

MJE18004
MJE18004

isc Silicon NPN Power Transistor MJE18008DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 7.13. Size:216K  inchange semiconductor
mje18006.pdf

MJE18004
MJE18004

isc Silicon NPN Power Transistor MJE18006DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 7.14. Size:216K  inchange semiconductor
mje18002.pdf

MJE18004
MJE18004

isc Silicon NPN Power Transistor MJE18002DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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