MJE18008 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE18008
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 13 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 14
Noise Figure, dB: -
Package: TO220
MJE18008 Transistor Equivalent Substitute - Cross-Reference Search
MJE18008 Datasheet (PDF)
mje18008.pdf
Order this documentMOTOROLAby MJE18008/DSEMICONDUCTOR TECHNICAL DATA*MJE18008Designer's Data Sheet*MJF18008SWITCHMODE*Motorola Preferred DeviceNPN Bipolar Power TransistorFor Switching Power Supply ApplicationsPOWER TRANSISTOR8.0 AMPERESThe MJE/MJF18008 have an applications specific stateoftheart die designed1000 VOLTSfor use in 220 V lineoper
mje18008.pdf
DATA SHEETwww.onsemi.comSwitch-mode NPN BipolarPOWER TRANSISTORPower Transistor8.0 AMPERES1000 VOLTSFor Switching Power Supply Applications 45 and 125 WATTSCOLLECTORMJE180082,4The MJE18008 have an applications specific state-of-the-art diedesigned for use in 220 V line-operated switch-mode Power supplies1and electronic light ballasts. BASEFeatures3EMITTER
mje18008 mjf18008.pdf
MJE18008, MJF18008Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18008 have an applications specific state-of-the-artdie designed for use in 220 V line-operated switch-mode Powerwww.onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:8.0 AMPERES Hi
mje18008.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18008 DESCRIPTION With TO-220C package High voltage ,high speed Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PI
mje18008.pdf
isc Silicon NPN Power Transistor MJE18008DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
mje18008g.pdf
MJE18008, MJF18008Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18008 have an applications specific state-of-the-artdie designed for use in 220 V line-operated switch-mode Powerwww.onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:8.0 AMPERES Hi
mje18009.pdf
Order this documentMOTOROLAby MJE18009/DSEMICONDUCTOR TECHNICAL DATAMJE18009Designer's Data SheetMJF18009SWITCHMODE NPN SiliconPlanar Power TransistorPOWER TRANSISTORSThe MJE/MJF18009 has an application specific stateoftheart die designed for10 AMPERESuse in 220 V lineoperated Switchmode Power supplies and electronic ballast (light1000 VOLTSballa
mje18006.pdf
Order this documentMOTOROLAby MJE18006/DSEMICONDUCTOR TECHNICAL DATA*MJE18006Designer's Data Sheet*MJF18006SWITCHMODE*Motorola Preferred DeviceNPN Bipolar Power TransistorFor Switching Power Supply ApplicationsPOWER TRANSISTOR6.0 AMPERESThe MJE/MJF18006 have an applications specific stateoftheart die designed1000 VOLTSfor use in 220 V lineoper
mje18004.pdf
Order this documentMOTOROLAby MJE18004/DSEMICONDUCTOR TECHNICAL DATADesigner's Data Sheet*MJE18004SWITCHMODE*MJF18004NPN Bipolar Power Transistor*Motorola Preferred DeviceFor Switching Power Supply ApplicationsPOWER TRANSISTORThe MJE/MJF18004 have an applications specific stateoftheart die designed5.0 AMPERESfor use in 220 V line operated Switchmod
mje18002.pdf
Order this documentMOTOROLAby MJE18002/DSEMICONDUCTOR TECHNICAL DATADesigner's Data SheetMJE18002*SWITCHMODEMJF18002*NPN Bipolar Power Transistor*Motorola Preferred DeviceFor Switching Power Supply ApplicationsThe MJE/MJF18002 have an applications specific stateoftheart die designed POWER TRANSISTORfor use in 220 V line operated Switchmode Power supplies a
mje18006-d.pdf
MJE18006GSWITCHMODEtNPN Bipolar Power TransistorFor Switching Power Supply ApplicationsThe MJE18006G has an applications specific state-of-the-art diehttp://onsemi.comdesigned for use in 220 V line-operated SWITCHMODE Powersupplies and electronic light ballasts.POWER TRANSISTORFeatures6.0 AMPERES Improved Efficiency Due to Low Base Drive Requirements:1000 VOLTS - 100
mje18004d2.pdf
MJE18004D2GHigh Speed, High GainBipolar NPN PowerTransistorwith Integrated Collector-Emitter Diodeand Built-in Efficient Antisaturation http://onsemi.comNetworkPOWER TRANSISTORSThe MJE18004D2 is state-of-art High Speed High gain BIPolar5 AMPERES,transistor (H2BIP). High dynamic characteristics and lot to lotminimum spread (150 ns on storage time) make it ideally suitable
mje18004g.pdf
MJE18004G, MJF18004GSWITCHMODENPN Bipolar Power TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18004G have an applications specific state-of-the-artdie designed for use in 220 V line-operated SWITCHMODE Powerhttp://onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:5.0 AMPERES
mje18004 mjf18004.pdf
MJE18004, MJF18004Switch-mode NPN BipolarPower TransistorFor Switching Power Supply ApplicationsThe MJE/MJF18004 have an applications specific state-of-the-artdie designed for use in 220 V line-operated switch-mode Powerwww.onsemi.comsupplies and electronic light ballasts.FeaturesPOWER TRANSISTOR Improved Efficiency Due to Low Base Drive Requirements:5.0 AMPERES Hi
mje18002.pdf
MJE18002GSWITCHMODEtNPN Bipolar Power TransistorFor Switching Power Supply ApplicationsThe MJE18002G have an applications specific state-of-the-art diehttp://onsemi.comdesigned for use in 220 V line operated Switchmode Power suppliesand electronic light ballasts.POWER TRANSISTORFeatures2.0 AMPERES Improved Efficiency Due to Low Base Drive Requirements:100 VOLTS - 50 W
mje18006.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18006 DESCRIPTION With TO-220C package High voltage ,high speed Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PI
mje18006.pdf
isc Silicon NPN Power Transistor MJE18006DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
mje18004.pdf
isc Silicon NPN Power Transistor MJE18004DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
mje18002.pdf
isc Silicon NPN Power Transistor MJE18002DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1000V(Min)(BR)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in 220V line-operated switchmode powersupplies and electronic light ballastsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
