MJE200 Specs and Replacement
Type Designator: MJE200
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 65 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 45
Package: TO126
MJE200 Substitution
- BJT ⓘ Cross-Reference Search
MJE200 datasheet
MJE200 Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product fT=65MHz @ IC=100mA (Min.) Complement to MJE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V ... See More ⇒
MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. http //onsemi.com Features 5.0 AMPERES Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - COMPLEMENTARY SILICON hFE ... See More ⇒
isc Silicon NPN Power Transistor MJE200 DESCRIPTION Collector Emitter Sustaining Voltage- V = 25V(Min) CEO(SUS) DC Current Gain- h = 70(Min) @ I = 500mA FE C Low Collector-Emitter Saturation Voltage- VCE(sat)= 0.3V(Max)@ I = 500mA C High Current-Gain Bandwidth Product fT= 65MHz(Min) @ I = 100mA C Minimum Lot-to-Lot variations for robust device performance and ... See More ⇒
Order this document MOTOROLA by MJE200/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power * MJE200 Plastic Transistors PNP . . . designed for low voltage, low power, high gain audio amplifier applications. * MJE210 Collector Emitter Sustaining Voltage VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc *Motorola Preferred Device High DC Current Gain hFE = 7... See More ⇒
Detailed specifications: MJE180 , MJE18002 , MJE18004 , MJE18006 , MJE18008 , MJE181 , MJE182 , MJE1909 , D667 , MJE201 , MJE2010 , MJE2011 , MJE202 , MJE2020 , MJE2021 , MJE203 , MJE204 .
History: RN4988
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