MJE2010 Specs and Replacement

Type Designator: MJE2010

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO126

 MJE2010 Substitution

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MJE2010 datasheet

 9.1. Size:255K  motorola

 mje200re.pdf pdf_icon

MJE2010

Order this document MOTOROLA by MJE200/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power * MJE200 Plastic Transistors PNP . . . designed for low voltage, low power, high gain audio amplifier applications. * MJE210 Collector Emitter Sustaining Voltage VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc *Motorola Preferred Device High DC Current Gain hFE = 7... See More ⇒

 9.2. Size:42K  fairchild semi

 mje200.pdf pdf_icon

MJE2010

MJE200 Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product fT=65MHz @ IC=100mA (Min.) Complement to MJE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V ... See More ⇒

 9.3. Size:115K  onsemi

 mje200 mje210.pdf pdf_icon

MJE2010

MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. http //onsemi.com Features 5.0 AMPERES Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - COMPLEMENTARY SILICON hFE ... See More ⇒

 9.4. Size:164K  onsemi

 mje200g mje210g.pdf pdf_icon

MJE2010

MJE200G (NPN), MJE210G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. http //onsemi.com Features 5.0 AMPERES High DC Current Gain POWER TRANSISTORS Low Collector-Emitter Saturation Voltage COMPLEMENTARY SILICON High Current-Gain - Bandwidth Product Annular Construc... See More ⇒

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Detailed specifications: MJE18004, MJE18006, MJE18008, MJE181, MJE182, MJE1909, MJE200, MJE201, BDT88, MJE2011, MJE202, MJE2020, MJE2021, MJE203, MJE204, MJE205, MJE2050

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