MJE2103 Datasheet. Specs and Replacement

Type Designator: MJE2103

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO220

 MJE2103 Substitution

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MJE2103 datasheet

 8.1. Size:63K  st

mje210.pdf pdf_icon

MJE2103

MJE210 SILICON PNP TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain aydio amplifier applications. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE ... See More ⇒

 8.2. Size:53K  st

mje210 2.pdf pdf_icon

MJE2103

MJE210 SILICON PNP TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base ... See More ⇒

 8.3. Size:41K  fairchild semi

mje210.pdf pdf_icon

MJE2103

MJE210 Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product fT=65MHz@IC= -100mA (Min.) Complement to MJE200 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 2... See More ⇒

 8.4. Size:115K  onsemi

mje200 mje210.pdf pdf_icon

MJE2103

MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. http //onsemi.com Features 5.0 AMPERES Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - COMPLEMENTARY SILICON hFE ... See More ⇒

Detailed specifications: MJE2090, MJE2091, MJE2092, MJE2093, MJE210, MJE2100, MJE2101, MJE2102, 2SA1943, MJE2150, MJE2160, MJE220, MJE221, MJE222, MJE223, MJE224, MJE225

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