MJE231 Datasheet. Specs and Replacement
Type Designator: MJE231
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO126
MJE231 Substitution
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MJE231 datasheet
Order this document MOTOROLA by MJE2360T/D SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS . . . useful for general purpose, high voltage applications requiring high fT. NPN SILICON Collector Emitter Sustaining Voltage 350 VOLTS VCEO(sus) = 350 Vdc (Min) @ IC = 2.5 mAdc 30 WATTS DC Current Gain ... See More ⇒
isc Silicon NPN Power Transistor MJE2360T DESCRIPTION Collector Emitter Sustaining Voltage- V = 350 V(Min) CEO(SUS) DC Current Gain- h = 25(Min) @ I = 50mA FE C Low Collector Saturation Voltage- V = 1.5V(Max.)@ I = 100mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low power audio amplifier... See More ⇒
Detailed specifications: MJE2160, MJE220, MJE221, MJE222, MJE223, MJE224, MJE225, MJE230, 2N3906, MJE232, MJE233, MJE234, MJE235, MJE2360, MJE2360T, MJE2361, MJE2361T
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