2N4297 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N4297
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: TO66
2N4297 Transistor Equivalent Substitute - Cross-Reference Search
2N4297 Datasheet (PDF)
9.4. Size:65K central
2n4296 2n4298 2n4299.pdf
2n4296 2n4298 2n4299.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
9.5. Size:186K inchange semiconductor
2n4298.pdf
2n4298.pdf
isc Silicon NPN Power Transistor 2N4298DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching regulator applications where highfrequency and high voltage swings and requiredABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: 2N428A , 2N4290 , 2N4291 , 2N4292 , 2N4293 , 2N4294 , 2N4295 , 2N4296 , NJW0281G , 2N4298 , 2N4299 , 2N43 , 2N4300 , 2N4301 , 2N4305 , 2N4306 , 2N4307 .
