MJE2522 Datasheet. Specs and Replacement
Type Designator: MJE2522
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO220
MJE2522 Substitution
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MJE2522 datasheet
MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. http //onsemi.com Features 4.0 AMPERES High Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc COMPLEMENTARY SILICON hFE =... See More ⇒
MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. http //onsemi.com Features 4.0 AMPERES High Collector-Emitter Sustaining Voltage - POWER TRANSISTORS VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc COMPLEMENTARY SILICON hFE =... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package E C B Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Value UNIT Collector Base Voltage VCBO 100 V Collector Emitter... See More ⇒
Detailed specifications: MJE2483, MJE2490, MJE2491, MJE250, MJE251, MJE252, MJE2520, MJE2521, 2SD2499, MJE2523, MJE253, MJE254, MJE270, MJE271, MJE2801, MJE2801K, MJE2801T
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