All Transistors. MJE271 Datasheet

 

MJE271 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJE271
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 6 MHz
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO126

 MJE271 Transistor Equivalent Substitute - Cross-Reference Search

   

MJE271 Datasheet (PDF)

 ..1. Size:101K  onsemi
mje270 mje271.pdf

MJE271
MJE271

MJE270 (NPN),MJE271 (PNP)Complementary SiliconPower TransistorsFeatureshttp://onsemi.com High Safe Operating AreaIS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARYVCEO(sus) = 100 Vdc (Min)POWER DARLINGTON High DC Current GainTRANSISTORShFE @ 120 mA, 10 V = 1500 (Min)100 VOLTS, 15 WATTS Pb-Free Packages are Availab

 0.1. Size:101K  onsemi
mje271g.pdf

MJE271
MJE271

MJE270 (NPN),MJE271 (PNP)Complementary SiliconPower TransistorsFeatureshttp://onsemi.com High Safe Operating AreaIS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARYVCEO(sus) = 100 Vdc (Min)POWER DARLINGTON High DC Current GainTRANSISTORShFE @ 120 mA, 10 V = 1500 (Min)100 VOLTS, 15 WATTS Pb-Free Packages are Availab

 0.2. Size:84K  onsemi
mje270g mje271g.pdf

MJE271
MJE271

MJE270G (NPN),MJE271G (PNP)Complementary SiliconPower TransistorsFeatureshttp://onsemi.com High Safe Operating AreaIS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARYVCEO(sus) = 100 Vdc (Min)POWER DARLINGTON High DC Current GainTRANSISTORShFE @ 120 mA, 10 V = 1500 (Min)100 VOLTS, 15 WATTS These Devices are Pb-Free

 9.1. Size:109K  motorola
mje270re.pdf

MJE271
MJE271

Order this documentMOTOROLAby MJE270/DSEMICONDUCTOR TECHNICAL DATANPNMJE270Complementary Silicon PowerPNPMJE271Transistors. . . designed specifically for use with the MC3419 SolidState Subscriber LoopInterface Circuit (SLIC). High Safe Operating Area 2.0 AMPEREIS/B @ 40 V, 1.0 s = 0.375 A TO126 COMPLEMENTARY CollectorEmitter Sustaining Voltage POWE

 9.2. Size:101K  onsemi
mje270g.pdf

MJE271
MJE271

MJE270 (NPN),MJE271 (PNP)Complementary SiliconPower TransistorsFeatureshttp://onsemi.com High Safe Operating AreaIS/B @ 40 V, 1.0 s = 0.375 A 2.0 AMPERE Collector-Emitter Sustaining Voltage COMPLEMENTARYVCEO(sus) = 100 Vdc (Min)POWER DARLINGTON High DC Current GainTRANSISTORShFE @ 120 mA, 10 V = 1500 (Min)100 VOLTS, 15 WATTS Pb-Free Packages are Availab

 9.3. Size:520K  cdil
mje270 71.pdf

MJE271
MJE271

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-126 (SOT-32) Plastic Package MJE270, MJE271MJE270 NPN PLASTIC POWER TRANSISTORMJE271 PNP PLASTIC POWER TRANSISTORMedium Power Darlingtons for Linear and Switching ApplicationsPIN CONFIGURATION1. EMITTER2. COLLECTOR3. BASE123ALL DIMENSIONS IN MMABSOLUTE MAXIMUM RATINGSCollect

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top