MJE370 Specs and Replacement
Type Designator: MJE370
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO126
MJE370 Substitution
- BJT ⓘ Cross-Reference Search
MJE370 datasheet
Order this document MOTOROLA by MJE371/D SEMICONDUCTOR TECHNICAL DATA MJE371 Plastic Medium-Power PNP 4 AMPERE Silicon Transistors POWER TRANSISTOR PNP SILICON . . . designed for use in general purpose amplifier and switching circuits. Recom- 40 VOLTS mended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry 40 WATTS circuitry. DC Current Gain hFE... See More ⇒
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
MJE371G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in general-purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry. http //onsemi.com Features High DC Current Gain 4 AMPERES MJE371 is Complementary to NPN MJE521 POWER TRANSISTOR These Devices are Pb-Free ... See More ⇒
MJE371 Plastic Medium-Power PNP Silicon Transistor This device is designed for use in general-purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry. http //onsemi.com Features DC Current Gain - hFE = 40 (Min) @ IC 4 AMPERES = 1.0 Adc POWER TRANSISTOR MJE371 is Complementary to NPN MJE521 PNP... See More ⇒
Detailed specifications: MJE344K, MJE345, MJE34A, MJE34B, MJE34C, MJE350, MJE3520, MJE3521, 2SA1943, MJE370K, MJE371, MJE371K, MJE3738, MJE3739, MJE3740, MJE3741, MJE41
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History: BTD1857AD3
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