MJE3739 Datasheet and Replacement
Type Designator: MJE3739
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 325 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
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MJE3739 Datasheet (PDF)
mje371re.pdf

Order this documentMOTOROLAby MJE371/DSEMICONDUCTOR TECHNICAL DATAMJE371Plastic Medium-Power PNP4 AMPERESilicon TransistorsPOWER TRANSISTORPNP SILICON. . . designed for use in generalpurpose amplifier and switching circuits. Recom-40 VOLTSmended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry40 WATTScircuitry. DC Current Gain hFE
mje371 mje521.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
mje371g.pdf

MJE371GPlastic Medium-PowerPNP Silicon TransistorThis device is designed for use in general-purpose amplifier andswitching circuits. Recommended for use in 5 to 20 Watt audioamplifiers utilizing complementary symmetry circuitry.http://onsemi.comFeatures High DC Current Gain4 AMPERES MJE371 is Complementary to NPN MJE521POWER TRANSISTOR These Devices are Pb-Free
mje371-d.pdf

MJE371Plastic Medium-PowerPNP Silicon TransistorThis device is designed for use in general-purpose amplifier andswitching circuits. Recommended for use in 5 to 20 Watt audioamplifiers utilizing complementary symmetry circuitry.http://onsemi.comFeatures DC Current Gain - hFE = 40 (Min) @ IC4 AMPERES= 1.0 AdcPOWER TRANSISTOR MJE371 is Complementary to NPN MJE521PNP
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: FCX619 | 2SD2687S | 2N5130 | 2SC2545
Keywords - MJE3739 transistor datasheet
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History: FCX619 | 2SD2687S | 2N5130 | 2SC2545



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