MJE4350 Specs and Replacement
Type Designator: MJE4350
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 800 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO218
MJE4350 Substitution
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MJE4350 datasheet
mje4350 mje4351 mje4352 mje4353.pdf ![]()
isc Silicon PNP Power Transistors MJE4350/4351/4352/4353 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min)- MJE4350 CEO(SUS) = -120V(Min)- MJE4351 = -140V(Min)- MJE4352 = -160V(Min)- MJE4353 Low Saturation Voltage Complement to the NPN MJE4340/4341/4342/4343 APPLICATIONS Designed for use in high power audio amplifier applications and high voltage switching r... See More ⇒
MJE4343 (NPN), MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. http //onsemi.com Features 16 AMPS High Collector-Emitter Sustaining Voltage - NPN PNP POWER TRANSISTORS VCEO(sus) = 160 Vdc - MJE4343 MJE4353 COMPLEMENTARY High DC Current Gain - @ IC = 8.0 Adc h... See More ⇒
isc Silicon PNP Power Transistor MJE4353 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -160V(Min) CEO(SUS) DC current gain - h = 15 (Min) @I = -8 A FE C h = 8 (Min) @I = -16A FE C Complement to Type MJE4343 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For use in high power audio amplifier and switching reg... See More ⇒
Detailed specifications: MJE42, MJE42A, MJE42B, MJE42C, MJE4340, MJE4341, MJE4342, MJE4343, A733, MJE4351, MJE4352, MJE4353, MJE47, MJE48, MJE488, MJE49, MJE4918
Keywords - MJE4350 pdf specs
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History: GES6222 | NKT219
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