MJE520K Datasheet and Replacement
Type Designator: MJE520K
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO220
MJE520K Substitution
MJE520K Datasheet (PDF)
mje520.pdf

isc Silicon NPN Power Transistor MJE520DESCRIPTIONHigh Collector Current-I = 3.0ACHigh Collector-Emitter Breakdown Voltage-: V = 30V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)
mje521 mje521re.pdf

Order this documentMOTOROLAby MJE521/DSEMICONDUCTOR TECHNICAL DATAMJE521Plastic Medium-Power NPN4 AMPERESilicon TransistorPOWER TRANSISTORNPN SILICON. . . designed for use in generalpurpose amplifier and switching circuits. Recom-40 VOLTSmended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry40 WATTScircuitry. DC Current Gain hFE
mje521.pdf

MJE521SILICON NPN TRANSISTOR STMicroelectronics PREFERREDSALESTYPEDESCRIPTION The MJE521 is a silicon Epitaxial-Base NPNtransistor in Jedec SOT-32 plastic package.It is intended for use in 5 to 20W audio amplifiers,general purpose amplifier and switching circuits.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collec
mje371 mje521.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
Datasheet: MJE5192 , MJE5192J , MJE5193 , MJE5194 , MJE5195 , MJE51T , MJE52 , MJE520 , SS8050 , MJE521 , MJE521K , MJE52T , MJE53 , MJE53T , MJE5420Z , MJE5655 , MJE5656 .
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