MJE520K
Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE520K
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40
W
Maximum Collector-Base Voltage |Vcb|: 30
V
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Collector Current |Ic max|: 3
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package:
TO220
MJE520K
Transistor Equivalent Substitute - Cross-Reference Search
MJE520K
Datasheet (PDF)
8.1. Size:214K inchange semiconductor
mje520.pdf 
isc Silicon NPN Power Transistor MJE520DESCRIPTIONHigh Collector Current-I = 3.0ACHigh Collector-Emitter Breakdown Voltage-: V = 30V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)
9.1. Size:128K motorola
mje521 mje521re.pdf
Order this documentMOTOROLAby MJE521/DSEMICONDUCTOR TECHNICAL DATAMJE521Plastic Medium-Power NPN4 AMPERESilicon TransistorPOWER TRANSISTORNPN SILICON. . . designed for use in generalpurpose amplifier and switching circuits. Recom-40 VOLTSmended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry40 WATTScircuitry. DC Current Gain hFE
9.2. Size:44K st
mje521.pdf
MJE521SILICON NPN TRANSISTOR STMicroelectronics PREFERREDSALESTYPEDESCRIPTION The MJE521 is a silicon Epitaxial-Base NPNtransistor in Jedec SOT-32 plastic package.It is intended for use in 5 to 20W audio amplifiers,general purpose amplifier and switching circuits.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collec
9.3. Size:65K central
mje371 mje521.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
9.4. Size:62K onsemi
mje521-d.pdf
MJE521Plastic Medium-PowerNPN Silicon TransistorThese devices are designed for use in general-purpose amplifier andswitching circuits. Recommended for use in 5 to 10 Watt audioamplifiers utilizing complementary symmetry circuitry.http://onsemi.comFeatures DC Current Gain - hFE = 40 (Min) @ IC4 AMPERES= 1.0 AdcPOWER TRANSISTORS Complementary to PNP MJE371NPN SILIC
9.5. Size:211K inchange semiconductor
mje521.pdf
isc Silicon NPN Power Transistor MJE521DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 40 V(Min)CEO(SUS)DC Current Gain-: h = 40(Min) @ I = 1AFE CComplement to Type MJE371Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching circuits applications.ABSOLU
9.6. Size:209K inchange semiconductor
mje52t.pdf
isc Silicon NPN Power Transistor MJE52TDESCRIPTIONCollector-Emitter Sustaining Voltage: V = 300V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage inverters, switching regulatorsand line operated amplifier applications. Especially wellsuited for switching power supply applicationsABSOLUT
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