MJE5732
Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE5732
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40
W
Maximum Collector-Base Voltage |Vcb|: 400
V
Maximum Collector-Emitter Voltage |Vce|: 400
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 10
MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package:
TO220
MJE5732
Transistor Equivalent Substitute - Cross-Reference Search
MJE5732
Datasheet (PDF)
8.1. Size:190K motorola
mje5730r.pdf 
Order this documentMOTOROLAby MJE5730/DSEMICONDUCTOR TECHNICAL DATAMJE5730MJE5731High Voltage PNP Silicon PowerMJE5731ATransistors. . . designed for line operated audio output amplifier, SWITCHMODE power supplydrivers and other switching applications.1.0 AMPEREPOWER TRANSISTORS 300 V to 400 V (Min) VCEO(sus)PNP SILICON 1.0 A Rated Collector Current300
8.2. Size:162K onsemi
mje5730g.pdf
MJE5730, MJE5731,MJE5731AHigh Voltage PNP SiliconPlastic Power TransistorsThese devices are designed for line operated audio output amplifier,SWITCHMODE power supply drivers and other switching http://onsemi.comapplications.1.0 AMPEREFeaturesPOWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus)PCP SILICON 1.0 A Rated Collector Current300-350-400 VOLTS Popular T
8.3. Size:238K onsemi
mje5730 mje5731 mje5731a.pdf
MJE5730, MJE5731,MJE5731AHigh Voltage PNP SiliconPlastic Power TransistorsThese devices are designed for line operated audio output amplifier,switch-mode power supply drivers and other switching applications. www.onsemi.comFeatures1.0 AMPERE Popular TO-220 Plastic PackagePOWER TRANSISTORS PNP Complements to the TIP47 thru TIP50 SeriesPCP SILICON These Devices ar
8.4. Size:162K onsemi
mje5731g.pdf
MJE5730, MJE5731,MJE5731AHigh Voltage PNP SiliconPlastic Power TransistorsThese devices are designed for line operated audio output amplifier,SWITCHMODE power supply drivers and other switching http://onsemi.comapplications.1.0 AMPEREFeaturesPOWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus)PCP SILICON 1.0 A Rated Collector Current300-350-400 VOLTS Popular T
8.5. Size:162K onsemi
mje5731ag.pdf
MJE5730, MJE5731,MJE5731AHigh Voltage PNP SiliconPlastic Power TransistorsThese devices are designed for line operated audio output amplifier,SWITCHMODE power supply drivers and other switching http://onsemi.comapplications.1.0 AMPEREFeaturesPOWER TRANSISTORS 300 V to 400 V (Min) - VCEO(sus)PCP SILICON 1.0 A Rated Collector Current300-350-400 VOLTS Popular T
8.6. Size:218K inchange semiconductor
mje5731.pdf
isc Silicon PNP Power Transistor MJE5731DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -350V(Min)CEO(SUS)DC current gain -: h = 30~150@ I = -0.3AFE CWith TO-220 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated audio output amplifier,switchmodepower supply drivers and other sw
8.7. Size:218K inchange semiconductor
mje5731a.pdf
isc Silicon PNP Power Transistor MJE5731ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -400V(Min)CEO(SUS)DC current gain -: h = 30~150@ I = -0.3AFE CWith TO-220 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated audio output amplifier,switchmodepower supply drivers and other s
8.8. Size:218K inchange semiconductor
mje5730.pdf
isc Silicon PNP Power Transistor MJE5730DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -300V(Min)CEO(SUS)DC current gain -: h = 30~150@ I = -0.3AFE CWith TO-220 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated audio output amplifier,switchmodepower supply drivers and other sw
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