MJF47
Datasheet, Equivalent, Cross Reference Search
Type Designator: MJF47
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 28
W
Maximum Collector-Base Voltage |Vcb|: 350
V
Maximum Collector-Emitter Voltage |Vce|: 250
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 10
MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package:
TO220F
MJF47
Transistor Equivalent Substitute - Cross-Reference Search
MJF47
Datasheet (PDF)
..1. Size:130K onsemi
mjf47.pdf
MJF47High Voltage PowerTransistorIsolated Package ApplicationsDesigned for line operated audio output amplifiers, switching powerhttp://onsemi.comsupply drivers and other switching applications, where the mountingsurface of the device is required to be electrically isolated from theNPN SILICONheatsink or chassis.POWER TRANSISTORFeatures1 AMPERE Electrically Similar
0.1. Size:160K motorola
mjf47rev.pdf
Order this documentMOTOROLAby MJF47/DSEMICONDUCTOR TECHNICAL DATAMJF47High Voltage Power TransistorNPN SILICONIsolated Package ApplicationsPOWER TRANSISTORDesigned for line operated audio output amplifiers, switching power supply drivers 1 AMPEREand other switching applications, where the mounting surface of the device is required 250 VOLTSto be electrically isolated from
0.2. Size:185K onsemi
mjf47g.pdf
MJF47GHigh Voltage PowerTransistorIsolated Package ApplicationsDesigned for line operated audio output amplifiers, switching powerhttp://onsemi.comsupply drivers and other switching applications, where the mountingsurface of the device is required to be electrically isolated from theheatsink or chassis.NPN SILICONPOWER TRANSISTORFeatures Electrically Similar to the Po
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