MJH16004 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJH16004
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO218
MJH16004 Transistor Equivalent Substitute - Cross-Reference Search
MJH16004 Datasheet (PDF)
mjh16006.pdf
Order this documentMOTOROLAby MJH16006A/DSEMICONDUCTOR TECHNICAL DATAMJH16006ADesigner's Data SheetNPN Silicon Power TransistorPOWER TRANSISTORS1 kV SWITCHMODE Series8 AMPERES500 VOLTSThese transistors are designed for highvoltage, highspeed, power switching in150 WATTSinductive circuits where fall time is critical. They are particularly suited forlineope
mjh16008.pdf
isc Silicon NPN Power Transistor MJH16008DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for li
mjh16006.pdf
isc Silicon NPN Power Transistor MJH16006DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for li
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
