MJH16006A Specs and Replacement
Type Designator: MJH16006A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 350 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TOP3
MJH16006A Substitution
MJH16006A datasheet
mjh16006.pdf
Order this document MOTOROLA by MJH16006A/D SEMICONDUCTOR TECHNICAL DATA MJH16006A Designer's Data Sheet NPN Silicon Power Transistor POWER TRANSISTORS 1 kV SWITCHMODE Series 8 AMPERES 500 VOLTS These transistors are designed for high voltage, high speed, power switching in 150 WATTS inductive circuits where fall time is critical. They are particularly suited for line ope... See More ⇒
mjh16006.pdf
isc Silicon NPN Power Transistor MJH16006 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for li... See More ⇒
mjh16008.pdf
isc Silicon NPN Power Transistor MJH16008 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for li... See More ⇒
Detailed specifications: MJH11022 , MJH12004 , MJH13090 , MJH13091 , MJH16002 , MJH16002A , MJH16004 , MJH16006 , NJW0281G , MJH16008 , MJH16106 , MJH6282 , MJH6283 , MJH6284 , MJH6285 , MJH6286 , MJH6287 .
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