MJH16106 Specs and Replacement
Type Designator: MJH16106
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 650 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 6
Noise Figure, dB: -
Package: TO218
MJH16106 Substitution
MJH16106 datasheet
mjh16006.pdf
Order this document MOTOROLA by MJH16006A/D SEMICONDUCTOR TECHNICAL DATA MJH16006A Designer's Data Sheet NPN Silicon Power Transistor POWER TRANSISTORS 1 kV SWITCHMODE Series 8 AMPERES 500 VOLTS These transistors are designed for high voltage, high speed, power switching in 150 WATTS inductive circuits where fall time is critical. They are particularly suited for line ope... See More ⇒
Detailed specifications: MJH13090 , MJH13091 , MJH16002 , MJH16002A , MJH16004 , MJH16006 , MJH16006A , MJH16008 , 2SD669A , MJH6282 , MJH6283 , MJH6284 , MJH6285 , MJH6286 , MJH6287 , MJW16010 , MJW16010A .
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