MM1154 Datasheet and Replacement
Type Designator: MM1154
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO72
MM1154 Substitution
MM1154 Datasheet (PDF)
wmm115n15hg4.pdf

WMM115N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMM115N15HG4 uses Wayon's 4th generation power trench DMOSFET technology that has been especially tailored to minimize the Gon-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. TO-263Features V = 150V, I =
Datasheet: MJW16206 , MJW16210 , MJW16212 , MM1008 , MM1139 , MM1151 , MM1152 , MM1153 , MPSA42 , MM1161 , MM1162 , MM1163 , MM1164 , MM1461 , MM1462 , MM1500 , MM1500A .
History: 2SC2194A | 2SC4151 | 3DD51 | DDTC123EKA | BD735 | BLX94C | IMZ1AFRA
Keywords - MM1154 transistor datasheet
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History: 2SC2194A | 2SC4151 | 3DD51 | DDTC123EKA | BD735 | BLX94C | IMZ1AFRA



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