MM1154 Specs and Replacement
Type Designator: MM1154
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO72
MM1154 Substitution
- BJT ⓘ Cross-Reference Search
MM1154 datasheet
WMM115N15HG4 150V N-Channel Enhancement Mode Power MOSFET Description WMM115N15HG4 uses Wayon's 4th generation power trench D MOSFET technology that has been especially tailored to minimize the G on-state resistance and yet maintain superior switching performance. S This device is well suited for high efficiency fast switching applications. TO-263 Features V = 150V, I = ... See More ⇒
Detailed specifications: MJW16206, MJW16210, MJW16212, MM1008, MM1139, MM1151, MM1152, MM1153, TIP120, MM1161, MM1162, MM1163, MM1164, MM1461, MM1462, MM1500, MM1500A
Keywords - MM1154 pdf specs
MM1154 cross reference
MM1154 equivalent finder
MM1154 pdf lookup
MM1154 substitution
MM1154 replacement
History: HUN5132 | 2SA923 | HUN5130 | 2SA2016 | 2SC4731 | 2SA919
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
2sd331 | 2sc1312 datasheet | 2sb647 | k3561 transistor | c3203 transistor | irfp450 equivalent | 2sb649 | 2sb324 transistor

