MM1161 Specs and Replacement

Type Designator: MM1161

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 350 MHz

Collector Capacitance (Cc): 1.1 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO72

 MM1161 Substitution

- BJT ⓘ Cross-Reference Search

 

MM1161 datasheet

NO PDF data!

Detailed specifications: MJW16210, MJW16212, MM1008, MM1139, MM1151, MM1152, MM1153, MM1154, B647, MM1162, MM1163, MM1164, MM1461, MM1462, MM1500, MM1500A, MM1501

Keywords - MM1161 pdf specs

 MM1161 cross reference

 MM1161 equivalent finder

 MM1161 pdf lookup

 MM1161 substitution

 MM1161 replacement