MM1613 Datasheet and Replacement
Type Designator: MM1613
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO5
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MM1613 Datasheet (PDF)
wmm161n15t2.pdf

WMM161N15T2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMM161N15T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures GS V =150V, I = 161A DS DTO-263R
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: RN2901 | KTC2553 | C9012A | 2SD2311 | BFR77 | 2N2989 | 2SC5793
Keywords - MM1613 transistor datasheet
MM1613 cross reference
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History: RN2901 | KTC2553 | C9012A | 2SD2311 | BFR77 | 2N2989 | 2SC5793



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