MM1613 Specs and Replacement

Type Designator: MM1613

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO5

 MM1613 Substitution

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MM1613 datasheet

 9.1. Size:483K  way-on

 wmm161n15t2.pdf pdf_icon

MM1613

WMM161N15T2 150V N-Channel Enhancement Mode Power MOSFET Description WMM161N15T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features G S V =150V, I = 161A DS D TO-263 R ... See More ⇒

Detailed specifications: MM1558, MM1559, MM1601, MM1602, MM1603, MM1605, MM1606, MM1607, BD140, MM1614, MM1619, MM1620, MM1711, MM1712, MM1736, MM1737, MM1738

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