MM1614 Datasheet, Equivalent, Cross Reference Search
Type Designator: MM1614
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO5
MM1614 Transistor Equivalent Substitute - Cross-Reference Search
MM1614 Datasheet (PDF)
9.1. Size:483K way-on
wmm161n15t2.pdf
wmm161n15t2.pdf
WMM161N15T2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMM161N15T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures GS V =150V, I = 161A DS DTO-263R
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N3736A
