All Transistors. 2N4357 Datasheet

 

2N4357 Datasheet and Replacement


   Type Designator: 2N4357
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 240 V
   Maximum Collector-Emitter Voltage |Vce|: 240 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO18
      - BJT Cross-Reference Search

   

2N4357 Datasheet (PDF)

 9.1. Size:18K  calogic
 2n4352.pdf pdf_icon

2N4357

P-Channel Enhancement ModeMOSFET Amplifier/SwitchCORPORATION2N4352FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)A Low ON Resistance Low Capacitance Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V High Gain Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V P-Chann

 9.2. Size:217K  linear-systems
 2n4351.pdf pdf_icon

2N4357

2N4351 N-CHANNEL MOSFET Linear Integrated Systems ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA TO-72HIGH GAIN gfs = 1000S BOTTOM VIEWABSOLUTE MAXIMUM RATINGS1 @ 25 C (unless otherwise stated) G 2 3 DMaximum Temperatures Storage Temperature -65 to +200 C Operating Junction Temperature -55 to +150 C 1 4S

Datasheet: 2N4346 , 2N4347 , 2N4348 , 2N4349 , 2N4350 , 2N4354 , 2N4355 , 2N4356 , TIP41C , 2N4358 , 2N4359 , 2N438 , 2N4383 , 2N4384 , 2N4385 , 2N4386 , 2N4387 .

History: RCA1B04 | 2SC4747 | BCX59VII | MP101B | BSX62SMD | BLW11 | PDTA143TE

Keywords - 2N4357 transistor datasheet

 2N4357 cross reference
 2N4357 equivalent finder
 2N4357 lookup
 2N4357 substitution
 2N4357 replacement

 

 
Back to Top

 


 
.