MM3009 Datasheet, Equivalent, Cross Reference Search
Type Designator: MM3009
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 180 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO39
MM3009 Transistor Equivalent Substitute - Cross-Reference Search
MM3009 Datasheet (PDF)
9.1. Size:41K ixys
vmm300-03f.pdf
vmm300-03f.pdf
Advanced Technical InformationVMM 300-03F VDSS = 300 VDual PowerID25 = 290 AHiPerFETTM ModuleRDS(on) typ. = 7.4 mW3893Phaseleg Configuration12111High dv/dt, Low trr, HDMOSTM Family109118102Symbol Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 10 kW 300 VFeaturesVGS Continuous 20 VVGSM Transient
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
