2N4384 Specs and Replacement
Type Designator: 2N4384
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO18
2N4384 Substitution
- BJT ⓘ Cross-Reference Search
2N4384 datasheet
isc Silicon PNP Power Transistor 2N4387 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,CECC,and JAN,JANTX and JANTXV and JA... See More ⇒
isc Silicon PNP Power Transistor 2N4388 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,CECC,and JAN,JANTX and JANTXV and JA... See More ⇒
Detailed specifications: 2N4354, 2N4355, 2N4356, 2N4357, 2N4358, 2N4359, 2N438, 2N4383, 2N5551, 2N4385, 2N4386, 2N4387, 2N4388, 2N4389, 2N438A, 2N439, 2N4390
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