2N111 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N111
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.13 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 24 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO22
2N111 Transistor Equivalent Substitute - Cross-Reference Search
2N111 Datasheet (PDF)
0.1. Size:286K fairchild semi
fdfm2n111.pdf
fdfm2n111.pdf
August 2005FDFM2N111Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description ApplicationsFDFM2N111 combines the exceptional performance of Standard Buck ConverterFairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a FeaturesMicroFET package. This device is designed specifically as a single pack
Datasheet: 2N1102 , 2N1103 , 2N1104 , 2N1105 , 2N1106 , 2N1107 , 2N1108 , 2N1109 , TIP3055 , 2N1110 , 2N1111 , 2N1111A , 2N1111B , 2N1114 , 2N1115 , 2N1115A , 2N1116 .
