All Transistors. 2N111 Datasheet


2N111 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N111

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.13 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 20 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 85 °C

Transition Frequency (ft): 1 MHz

Collector Capacitance (Cc): 24 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO22

2N111 Transistor Equivalent Substitute - Cross-Reference Search


2N111 Datasheet (PDF)

0.1. fdfm2n111.pdf Size:286K _fairchild_semi


August 2005FDFM2N111Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description ApplicationsFDFM2N111 combines the exceptional performance of Standard Buck ConverterFairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a FeaturesMicroFET package. This device is designed specifically as a single pack

Datasheet: 2N1102 , 2N1103 , 2N1104 , 2N1105 , 2N1106 , 2N1107 , 2N1108 , 2N1109 , BC557 , 2N1110 , 2N1111 , 2N1111A , 2N1111B , 2N1114 , 2N1115 , 2N1115A , 2N1116 .


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