2N4397 Transistor. Datasheet pdf. Equivalent
Type Designator: 2N4397
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 0.2 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO72
2N4397 Transistor Equivalent Substitute - Cross-Reference Search
2N4397 Datasheet PDF:
5.1. 2n4398_2n4399_2n5745.pdf 
Size:237K _motorola
Order this document MOTOROLA by 2N4398/D SEMICONDUCTOR TECHNICAL DATA 2N4347 (See 2N3442) PNP Silicon High-Power Transistors 2N4398 . . . designed for use in power amplifier and switching circuits. • Low Collector–Emitter Saturation Voltage — 2N4399 IC = 15 Adc, VCE(sat) = 1.0 Vdc (Max) 2N4398,99 2N5745 IC = 15 Adc, VCE(sat) = 1.5 Vdc (Max) 2N5745 IIIIIIIIIIIIIIIIIIIIIII • DC Curren
5.2. 2n4391_pn4391_sst4391_2n4392_pn4392_sst4392_2n4393_pn4393_sst4393.pdf Size:59K _vishay
2N/PN/SST4391 Series Vishay Siliconix N-Channel JFETs 2N4391 PN4391 SST4391 2N4392 PN4392 SST4392 2N4393 PN4393 SST4393 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N/PN/SST4391 –4 to –10 30 5 4 2N/PN/SST4392 –2 to –5 60 5 4 2N/PN/SST4393 –0.5 to –3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 4391<30 W D Low Error Voltage D Ana
5.3. 2n4391_2n4392_2n4393.pdf Size:106K _central
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com
5.4. 2n4398-99_2n5745.pdf Size:158K _mospec
A A A A
5.5. 2n4392.pdf Size:15K _semelab
2N4392 MECHANICAL DATA Dimensions in mm (inches) JFET SWITCHING 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) N CHANNEL- DEPLETION 4.52 (0.178) FEATURES • LOW ON RESISTANCE 0.48 (0.019) 0.41 (0.016) • FAST SWITCHING dia. • MILITARY OPTIONS AVAILABLE 2.54 (0.100) Nom. 3 1 2 APPLICATIONS: • SWITCHING APPLICATIONS TO–18 METAL PACKAGE Underside View PIN 1 – Source PIN 2 – Drain PIN 3
5.6. 2n4391.pdf Size:13K _semelab
2N4391 MECHANICAL DATA Dimensions in mm (inches) JFET SWITCHING 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) N CHANNEL- DEPLETION 4.52 (0.178) FEATURES • LOW ON RESISTANCE 0.48 (0.019) 0.41 (0.016) • FAST SWITCHING dia. • MILITARY OPTIONS AVAILABLE 2.54 (0.100) Nom. 3 1 2 APPLICATIONS: • SWITCHING APPLICATIONS TO–18 METAL PACKAGE Underside View PIN 1 – Source PIN 2 – Drain PIN 3
5.7. 2n4391_2n4392_2n4393_pn4391_pn4392_pn4393_sst4391_sst4392_sst4393.pdf Size:29K _calogic
N-Channel JFET Switch CORPORATION 2N4391 – 2N4393 / PN4391 – PN4393 / SST4391 – SST4393 FEATURES ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise noted) A • r <300 Ohms (2N4391) • ds(on) • I <100pA Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V • D(OFF) • Switches ±10VAC With ±15V Supplies (4392, 4393) Gate Current . . . . . . . . . . . . . . . . . . . . . . .
5.8. 2n4399.pdf Size:38K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4399 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -15A ·Wide Area of Safe Operation ·Complement to Type 2N5302 APPLICATIONS ·Designed for use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT V Collector
5.9. 2n4398_2n4399_2n5745.pdf Size:121K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2N5301/5302/5303 Ў¤ Low collector saturation voltage Ў¤ Excellent safe operating area APPLICATIONS Ў¤ For use in power amplifier and switching circuits applications. PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N4398 2N4399 2N5745 Fig.1 simplified
5.10. 2n4398.pdf Size:38K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4398 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -15A ·Wide Area of Safe Operation ·Complement to Type 2N5301 APPLICATIONS ·Designed for use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT V Collector
Datasheet: 2N4387 , 2N4388 , 2N4389 , 2N438A , 2N439 , 2N4390 , 2N4395 , 2N4396 , 2N3906 , 2N4398 , 2N4399 , 2N439A , 2N43A , 2N44 , 2N440 , 2N4400 , 2N4401 .
