MMBR4957 Datasheet and Replacement
Type Designator: MMBR4957
SMD Transistor Code: 7F
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.278 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1200 MHz
Collector Capacitance (Cc): 0.8 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: SOT23
MMBR4957 Substitution
MMBR4957 Datasheet (PDF)
mmbr4957.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR4957LT1/DThe RF LinePNP SiliconMMBR4957LT1, T3High-Frequency Transistor. . . designed for highgain, lownoise amplifier oscillator and mixer applica-tions. Specifically packaged for thick and thinfilm circuits using surface mountcomponents. High Gain Gpe = 17 dB Typ @ f = 450 MHzIC = 30 mA
Datasheet: MMBC1653N2 , MMBC1653N3 , MMBC1653N4 , MMBC1654N5 , MMBC1654N6 , MMBC1654N7 , MMBR2060 , MMBR2857 , C5198 , MMBR4957LT1 , MMBR4957LT3 , MMBR5031 , MMBR5031LT1 , MMBR5179 , MMBR5179LT1 , MMBR521LT1 , MMBR536 .
History: MP5436 | PE4010 | 2SD1253A | UNR1212 | BFR93P | SQ4261F | KT361V2
Keywords - MMBR4957 transistor datasheet
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History: MP5436 | PE4010 | 2SD1253A | UNR1212 | BFR93P | SQ4261F | KT361V2



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