MMBR5179LT1 Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBR5179LT1
SMD Transistor Code: 7H
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.375 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1400 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT23
MMBR5179LT1 Transistor Equivalent Substitute - Cross-Reference Search
MMBR5179LT1 Datasheet (PDF)
mmbr5179.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR571LT1/DThe RF LineMMBR571LT1NPN SiliconMPS571 MRF571High-Frequency TransistorsMRF5711LT1Designed for low noise, wide dynamic range frontend amplifiers andlownoise VCOs. Available in a surfacemountable plastic package, as well asthe popular TO226AA (TO92) package. This Motorola series of smal
mmbr521lt1 mrf5211lt1.pdf
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mmbr5031.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR5031LT1/DThe RF LineNPN SiliconMMBR5031LT1High-Frequency TransistorDesigned for thick and thinfilm circuits using surface mount componentsand requiring lownoise, highgain signal amplification at frequencies to 1.0GHz. High Gain Gpe = 17 dB Typ @ f = 450 MHz Low Noise NF = 2.5 dB Typ @ f
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: BD545C
