All Transistors. MMBR5179LT1 Datasheet

 

MMBR5179LT1 Datasheet and Replacement


   Type Designator: MMBR5179LT1
   SMD Transistor Code: 7H
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.375 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 2.5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1400 MHz
   Collector Capacitance (Cc): 1 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SOT23
 

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MMBR5179LT1 Datasheet (PDF)

 6.1. Size:55K  motorola
 mmbr5179.pdf pdf_icon

MMBR5179LT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR5179LT1/DThe RF LineNPN SiliconMMBR5179LT1High-Frequency TransistorDesigned for smallsignal amplification at frequencies to 500 MHz.Specifically packaged for use in thick and thinfilm circuits using surface mountcomponents. High Gain Gpe = 15 dB Typ @ f = 200 MHz Low Noise NF = 4.5 dB Typ @

 9.1. Size:358K  motorola
 mmbr571lt1 mps571 mrf571 mrf5711lt1.pdf pdf_icon

MMBR5179LT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR571LT1/DThe RF LineMMBR571LT1NPN SiliconMPS571 MRF571High-Frequency TransistorsMRF5711LT1Designed for low noise, wide dynamic range frontend amplifiers andlownoise VCOs. Available in a surfacemountable plastic package, as well asthe popular TO226AA (TO92) package. This Motorola series of smal

 9.2. Size:151K  motorola
 mmbr521lt1 mrf5211lt1.pdf pdf_icon

MMBR5179LT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR521LT1/DThe RF LinePNP SiliconMMBR521LT1High-Frequency TransistorMRF5211LT1Designed primarily for use in the highgain, lownoise smallsignalamplifiers for operation up to 3.5 GHz. Also usable in applications requiring fastswitching times. High Current GainBandwidth Product IC = 70 mAfT

 9.3. Size:54K  motorola
 mmbr5031.pdf pdf_icon

MMBR5179LT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR5031LT1/DThe RF LineNPN SiliconMMBR5031LT1High-Frequency TransistorDesigned for thick and thinfilm circuits using surface mount componentsand requiring lownoise, highgain signal amplification at frequencies to 1.0GHz. High Gain Gpe = 17 dB Typ @ f = 450 MHz Low Noise NF = 2.5 dB Typ @ f

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Datasheet: MMBR2060 , MMBR2857 , MMBR4957 , MMBR4957LT1 , MMBR4957LT3 , MMBR5031 , MMBR5031LT1 , MMBR5179 , BC337 , MMBR521LT1 , MMBR536 , MMBR571LT1 , MMBR901 , MMBR901LT1 , MMBR901LT3 , MMBR911LT1 , MMBR920 .

History: 3CA1072 | BLU56 | GES4274 | D45VM9 | MPS6571 | 2SD553O | P307A

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