MMBR901LT3 Datasheet. Specs and Replacement
Type Designator: MMBR901LT3 📄📄
SMD Transistor Code: 7A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3800 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: SOT23
MMBR901LT3 Substitution
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MMBR901LT3 datasheet
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR901LT1/D The RF Line MMBR901LT1, T3 NPN Silicon MPS901 MRF901 High-Frequency Transistor MRF9011LT1 Designed primarily for use in high gain, low noise small signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. High Current Gain Bandwidth Product IC ... See More ⇒
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR951ALT1/D The RF Line MMBR951 NPN Silicon MRF951 Low Noise, High-Frequency MRF957 Transistors MRF9511 Designed for use in high gain, low noise small signal amplifiers. This series SERIES features excellent broadband linearity and is offered in a variety of packages. Fully Implanted Base and Emitter Structure ... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR931LT1/D The RF Line NPN Silicon MMBR931LT1 High-Frequency Transistor Designed primarily for use in low power amplifiers to 1.0 GHz. Ideal for pagers and other battery operated systems where power consumption is critical. Available in tape and reel packaging options T1 suffix = 3,000 units per reel RF AMPLIFIER... See More ⇒
Detailed specifications: MMBR5031LT1, MMBR5179, MMBR5179LT1, MMBR521LT1, MMBR536, MMBR571LT1, MMBR901, MMBR901LT1, D882, MMBR911LT1, MMBR920, MMBR920LT1, MMBR920LT3, MMBR931, MMBR931LT1, MMBR941, MMBR941BLT1
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