MMBR920 Datasheet. Specs and Replacement
Type Designator: MMBR920 📄📄
SMD Transistor Code: 7B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.268 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.035 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4500 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: SOT23
MMBR920 Substitution
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MMBR920 datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR920LT1/D The RF Line NPN Silicon MMBR920LT1 High-Frequency Transistor Designed for thick and thin film circuits using surface mount components and requiring low noise, high gain signal amplification at frequencies to 1.0 GHz. High Gain Gpe = 15 dB Typ @ f = 500 MHz Low Noise NF = 2.4 dB Typ @ f = ... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR920LT1/D The RF Line NPN Silicon MMBR920LT1, T3 High-Frequency Transistor . . . designed for thick and thin film circuits using surface mount components and requiring low noise, high gain signal amplification at frequencies to 1.0 GHz. High Gain Gpe = 15 dB Typ @ f = 500 MHz Low Noise NF = 2.4 dB ... See More ⇒
mmbr901lt1 mps901 mrf901 mrf9011lt1.pdf ![]()
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR901LT1/D The RF Line MMBR901LT1, T3 NPN Silicon MPS901 MRF901 High-Frequency Transistor MRF9011LT1 Designed primarily for use in high gain, low noise small signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. High Current Gain Bandwidth Product IC ... See More ⇒
Detailed specifications: MMBR5179LT1, MMBR521LT1, MMBR536, MMBR571LT1, MMBR901, MMBR901LT1, MMBR901LT3, MMBR911LT1, TIP42C, MMBR920LT1, MMBR920LT3, MMBR931, MMBR931LT1, MMBR941, MMBR941BLT1, MMBR941BLT3, MMBR941LT1
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History: MMBR901LT3
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