MMBR941 Datasheet. Specs and Replacement
Type Designator: MMBR941 📄📄
SMD Transistor Code: 7Y
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 8000 MHz
Collector Capacitance (Cc): 0.3 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: SOT23
MMBR941 Substitution
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MMBR941 datasheet
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR901LT1/D The RF Line MMBR901LT1, T3 NPN Silicon MPS901 MRF901 High-Frequency Transistor MRF9011LT1 Designed primarily for use in high gain, low noise small signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. High Current Gain Bandwidth Product IC ... See More ⇒
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR951ALT1/D The RF Line MMBR951 NPN Silicon MRF951 Low Noise, High-Frequency MRF957 Transistors MRF9511 Designed for use in high gain, low noise small signal amplifiers. This series SERIES features excellent broadband linearity and is offered in a variety of packages. Fully Implanted Base and Emitter Structure ... See More ⇒
Detailed specifications: MMBR901LT1, MMBR901LT3, MMBR911LT1, MMBR920, MMBR920LT1, MMBR920LT3, MMBR931, MMBR931LT1, 2N2222A, MMBR941BLT1, MMBR941BLT3, MMBR941LT1, MMBR941LT3, MMBR951ALT1, MMBR951LT1, MMBT100, MMBT100A
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History: MMBR920LT3 | MMBR931
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