2N44 Datasheet and Replacement

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4410/DAmplifier TransistorNPN Silicon2N4410COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 80 VdcCollectorBase Voltage VCBO 120 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current Continuou

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4400/DGeneral Purpose Transistors2N4400NPN Silicon*2N4401*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 40 VdcCollectorBase Voltage VCBO 60 VdcEmitterBase Voltage

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4402/DGeneral Purpose Transistors2N4402PNP Silicon*2N4403*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 40 VdcCollectorBase Voltage VCBO 40 VdcEmitterBase Voltage

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N4403PNP switching transistor1999 Apr 23Product specificationSupersedes data of 1997 May 05Philips Semiconductors Product specificationPNP switching transistor 2N4403FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 collector2 baseAPPLICATIONS3 emitter Industr

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N4401NPN switching transistor1999 Apr 23Product specificationSupersedes data of 1997 May 07Philips Semiconductors Product specificationNPN switching transistor 2N4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 collector2 baseAPPLICATIONS3 emitter Industr

DISCRETE SEMICONDUCTORSDATA SHEET2N3866; 2N4427Silicon planar epitaxialoverlay transistors1995 Oct 27Product specificationSupersedes data of August 1986File under Discrete Semiconductors, SC08aPhilips Semiconductors Product specificationSilicon planar epitaxial2N3866; 2N4427overlay transistorsDESCRIPTION APPLICATIONSNPN overlay transistors in TO-39 metal packages wi

2N4400 MMBT4400CEC TO-92BBE SOT-23Mark: 83NPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Voltage 6.

2N4403 MMBT4403CEC TO-92BSOT-23BEMark: 2TPNP General Purpose AmplifierThis device is designed for use as a general purpose amplifierand switch requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage40VVEBO Emitter-Base Voltage 5.0

Discrete POWER & SignalTechnologies2N4410C TO-92BENPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 50 mA. Sourcedfrom Process 16. See 2N5551 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VV

2N4402C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VV Collector-Base Voltage 40 VCBOVEBO Emitter-Base Voltage5.0VICCollector Current - Continuo

2N4401 MMBT4401CEC TO-92BSOT-23BEMark: 2XNPN General Pupose AmplifierThis device is designed for use as a medium power amplifier andswitch requiring collector currents up to 500 mA.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Voltage 6.0

2N4400/4401 NPN EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 40V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage VEBO 6 VCollector Current IC 600 mACollector Dissipation PC 6

2N4402/4403 PNP EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 40V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage VEBO -5 VCollector Current IC -600 mACollector Dissipation

UMT4401 / SST4401 / MMST4401 / 2N4401TransistorsNPN Medium Power Transistor(Switching)UMT4401 / SST4401 / MMST4401 / 2N4401 External dimensions (Units : mm) Features2.00.2UMT44011.30.1 0.90.11) BVCEO>40V (IC=1mA)0.65 0.65 0.2 0.70.1(1) (2)2) Complements the UMT4403 / SST4403 / MMST44030~0.1/ PN4403.(3)(1) Emitter(2) Base0.3+0.1 0.150.05ROHM : UM

Transistors UMT4403 / SST4403 / MMST4403 / 2N4403(SPEC-A31)602Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon act

2N4416/2N4416A/SST4416Vishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)2N4416 -v6 -30 4.5 52N4416A -2.5 to -6 -35 4.5 5SST4416 -v6 -30 4.5 5FEATURES BENEFITS APPLICATIONSD Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/Mixer2N4416/A, Gps 13 dB (typ) @D Very High System Sensitiv

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

TM2N4416Central2N4416ASemiconductor Corp.N-CHANNEL JFETDESCRIPTION:The CENTRAL SEMICONDUCTOR 2N4416 and2N4416A are silicon N-Channel Junction FieldEffect Transistors designed for VHF amplifier andmixer applications.MARKING CODE:Full Part NmberJEDEC TO-72 CASEMAXIMUM RATINGS: (TA=25C)SYMBOL 2N4416 2N4416A UNITSGate-Drain Voltage VGD 30 35 VGate-Source Voltage

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

MCCTM Micro Commercial Components20736 Marilla Street Chatsworth2N4403Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Through Hole Package Capable of 600mWatts of Power DissipationPNP General Epoxy meets UL 94 V-0 flammability ratingPurpose Amplifier Moisure Sensitivity Level 1 Marking:Type number Lead Free

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth 2N4401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Capable of 600mWatts of Power DissipationPurpose Amplifier Through Hole Package Epoxy meet

2N4403Preferred Device General PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR32MAXIMUM RATINGSBASERating Symbol Value UnitCollector - Emitter Voltage VCEO 40 Vdc1EMITTERCollector - Base Voltage VCBO 40 VdcEmitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 600 mAdcTotal Device Dissipatio

2N4401General PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO 40 Vdc1Collector - Base Voltage VCBO 60 VdcEMITTEREmitter - Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 600 mAdcTotal Device Dissipation PD@ TA = 25C

2N4401General PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO 40 Vdc1Collector - Base Voltage VCBO 60 VdcEMITTEREmitter - Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 600 mAdcTotal Device Dissipation PD@ TA = 25C

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

2N4403Preferred Device General PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR32MAXIMUM RATINGSBASERating Symbol Value UnitCollector - Emitter Voltage VCEO 40 Vdc1EMITTERCollector - Base Voltage VCBO 40 VdcEmitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 600 mAdcTotal Device Dissipatio

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD 2N4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. *Pb-free plating product number: 2N4403L ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 32N4403-T9

UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: 2N4401LHalogen-free:2N4401G ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 32N4401-T9

UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: 2N4401LHalogen-free:2N4401G ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 32N4401-T9

UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: 2N4401LHalogen-free:2N4401G ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 32N4401-T9

2N4401NPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application CFeatures B Low Leakage current Low collector saturation voltage enabling Elow voltage operation Complementary pair with 2N4403 TO-92 Ordering Information Type NO. Marking Package Code 2N4401 2N4401 TO-92Absolute maximum ratings T

2N4416A2N4416ASMALL SIGNAL NCHANNEL JFET THAT ISDESIGNED TO PROVIDE HIGHMECHANICAL DATAPERFORMANCE AMPLIFICATION ATDimensions in mm (inches)HIGH FREQUENCIES4.95 (0.195)4.52 (0.178)4.95 (0.195)4.52 (0.178)FEATURES EXCELLENT HIGH FREQUENCY GAINS0.48 (0.019)0.41 (0.016) CECC SCREENING OPTIONSdia. SPACE QUALITY LEVEL OPTIONS2.54 (0.100)Nom.

SILICON SMALL SIGNAL N-CHANNEL JFET 2N4416AC1 Low Noise, High Gain. Hermetic Surface Mounted Package. Designed For VHF/UHF Amplifiers, Oscillators And Mixers. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS Drain Source Voltage 35V VGS Gate Source Voltage -35V VGD Gate Drain Voltage -35V IG

2N4416DCSMSEMELABSMALL SIGNAL DUALNCHANNEL JFET IN AHERMETICALLY SEALEDCERAMIC SURFACE MOUNT PACKAGEFOR HIGH RELIABILITY APPLICATIONSMECHANICAL DATADimensions in mm (inches)FEATURES1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005) HERMETIC CERAMIC SURFACE MOUNTPACKAGE2 3 CECC SCREENING OPTIONS1 4A SPACE

2N4416CSMA2N4416ACSMSMALL SIGNAL NCHANNEL JFET IN AHERMETICALLY SEALEDCERAMIC SURFACE MOUNT PACKAGEMECHANICAL DATADimensions in mm (inches)FOR HIGH RELIABILITY APPLICATIONS0.51 0.10(0.02 0.004) 0.31rad.(0.012)FEATURES3 HERMETIC CERAMIC SURFACE MOUNTPACKAGE (SOT23 COMPATIBLE)21 CECC SCREENING OPTIONS1.91 0.10 SPACE QUALITY LEVEL OPT

2N4400 0.6 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES General Purpose Amplifier Transistor TO-92 EmitterG H Base CollectorJA DMillimeterCollectorREF. Min. Max.BA 4.40 4.70B 4.30 4.70KC 12.70 -D 3.30 3.81E 0.3

2N4403PNP TransistorElektronische BauelementePlastic-Encapsulate TransistorsRoHS Compliant ProductTO-92A suffix of "-C" specifies halogen & lead-free4.550.2 3.50.2FEATURESPower Dissipationo C MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Value Units Parameter Collector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40VEmitter-Base Volta

2N4401NPN TransistorElektronische BauelementePlastic-Encapsulate TransistorsRoHS Compliant ProductTO-92A suffix of "-C" specifies halogen & lead-free4.550.2 3.50.2FeaturesPower Dissipationo MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol Value Units Parameter Collector-Base Voltage VCBO 60VCollector-Emitter Voltage VCEO 40VEmitter-Base Voltage

2N4402 -0.6 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 General Purpose Amplifier TransistorG H Emitter Base CollectorJA DCollector MillimeterBREF. Min. Max.A 4.40 4.70KB 4.30 4.70C 12.70 -D 3.30 3.81E

2N4429 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI 2N4429 is Designed for A 45Class C Amplifier Applications Up to 1,000 MHz. B FEATURES: C D PG = 7.5 dB Typ. at 1.0 W/1000 MHz JE I Emitter Ballasting for Ruggedness F Omnigold Metallization System GH#8-32 UNCKMAXIMUM RATINGS MINIMUM MAXIMUMDIMin

2N4428NPN SILICON HIGH FREQUENCY TRANSISTORPACKAGE STYLE TO-39DESCRIPTION:The 2N4428 is a High FrequencyTransistor Designed for Amplifier andOscillator Applications.MAXIMUM RATINGS IC 425 mAVCE 30 VPDISS 3.5 W @ TC = 25 OC TJ -65 OC to +200 OCTSTG -65 OC to +200 OC 1 = EMITTER 2 = BASE3 = COLLECTOR50 OC/WJCNONECHARACTERISTICS TC = 25 OCSYMBOL TE

N-Channel JFETHigh Frequency AmplifierCORPORATION2N4416 / 2N4416A / PN4416FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)A Low Noise Low Feedback Capacitance Gate-Source or Gate-Drain Voltage Low Output Capacitance 2N4416, PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V High Transconductance 2N4416A . . . .

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N4402 / 2N4403PNP SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORSTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"CBEGeneral Purpose Switching And Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITSCollector Emi

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N4400 / 2N4401NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORSTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"CBEGeneral Purpose Switching And Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITSCollector Emi

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2N4403 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMILTTER 2. BASE 3. COLLECTOR Equivalent Circuit 2N4403 = Device code 2 NSolid dot = Green molding compound device, 4 4 0 3if none, the normal deviceXX XXX XXX = Code

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4401 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Value Unit Parameter 1.EMILTTER Collector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 V2.BASE VEBO Emitter-Base Voltage 6 V 3. COLLECTOR Collect

SEMICONDUCTOR 2N4401SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EL B LFEATURES Complementary to the 2N4403SCDIM MILLIMETERS_+A 2.90 0.123B 1.30+0.20/-0.15C 1.30 MAX1D 0.40+0.15/-0.05E 2.40+0.30/-0.20G 1.90J 0.10K 0.00 ~ 0.10L 0.55M 0.20 MINMAXIMUM RATING (Ta=25)N 1.00+0.20/-0.10CHARAC

SEMICONDUCTOR 2N4403SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EL B LFEATURES Complementary to the 2N4401SCDIM MILLIMETERS_+A 2.90 0.123B 1.30+0.20/-0.15C 1.30 MAX1D 0.40+0.15/-0.05E 2.40+0.30/-0.20G 1.90J 0.10K 0.00 ~ 0.10MAXIMUM RATING (Ta=25)L 0.55M 0.20 MINCHARACTERISTIC SYMBOL RAT

TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 Devices Qualified Level 2N2369A 2N4449 JAN 2N2369AU 2N4449U JANTX 2N2369AUA 2N4449UA JANTXV 2N2369AUB 2N4449UB MAXIMUM RATINGS Ratings Symbol All UB All others Unit Collector-Emitter Voltage 20 15 Vdc VCEO Emitter-Base Voltage 6.0 4.5 Vdc VEBO Collector-Base Voltage 40 Vdc VCBO

TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 Devices Qualified Level 2N2369A 2N4449 JAN 2N2369AU 2N4449U JANTX 2N2369AUA 2N4449UA JANTXV 2N2369AUB 2N4449UB MAXIMUM RATINGS Ratings Symbol All UB All others Unit Collector-Emitter Voltage 20 15 Vdc VCEO Emitter-Base Voltage 6.0 4.5 Vdc VEBO Collector-Base Voltage 40 Vdc VCBO

2N4403(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 mA PC Collector Power dissipation 0.625 W

2N4401(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Value Units Parameter Collector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 VVEBO Emitter-Base Voltage 6 V Collector Current -Continuous IC 600 mACollector Power dissipation PC 0.625

2N4403General Purpose TransistorsTO-92PNP Silicon COLLECTOR32BASE11. EMITTER 2312. BASEEMITTER3. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol 2N4403UnitCollector-Emitter Voltage VCEO -40 VdcCollector-Base Voltage VCBO -40VdcEmitter-Base Voltage VEBO-5.0 VdcCollector Current IC-600 mAdcTotal Device Dissipation T =25 C PD 625 mWAJu

2N4401General Purpose TransistorsNPN SiliconTO-92 FEATURES 11. EMITTER 2 Power dissipation 32. BASE PCM : 0.625 W Tamb=25 3. COLLECTOR Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range TJTstg: -55 to +150 ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specifie

Spec. No. : HE6221HI-SINCERITYIssued Date : 1992.09.30Revised Date : 2004.08.13MICROELECTRONICS CORP.Page No. : 1/5H2N4403PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N4403 is designed for general purpose switching and amplifier applications.FeaturesTO-92 Complementary to H2N4401 High Power Dissipation: 625mW at 25C High DC Current Gain: 100-300 at 150m

Spec. No. : HE6215HI-SINCERITYIssued Date : 1992.09.22Revised Date : 2002.02.22MICROELECTRONICS CORP.Page No. : 1/5H2N4401NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N4401 is designed for general purpose switching and amplifier applications.FeaturesTO-92 Complementary to H2N4403 High Power Dissipation: 625 mW at 25C High DC Current Gain: 100-300 at 150

Spec. No. : C305A3 Issued Date : 2003.06.13 CYStech Electronics Corp.Revised Date : 2014.05.12 Page No. : 1/8 General Purpose PNP Epitaxial Planar Transistor 2N4403A3Description The 2N4403A3 is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC Max .= -0.6A Low VCE(sat), typically -0.2V at IC/IB = -300mA / -30mA.

Spec. No. : C203A3 Issued Date : 2003.06.06 CYStech Electronics Corp.Revised Date : 2011.12.28 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor 2N4401A3Description The 2N4401A3 is designed for using in driver stage of AF amplifier and general purpose switching application. High current , I = 0.6A C Low V , V = 0.2V(typ.) at I /I = 500mA/50mA C

2N4403 Rev.F Sep.-2016 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features High current, Low voltage. / Applications 500mA General purpose amplifier and switch requiring collector currents u

2N4401 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High current, Low voltage. / Applications I 500mA CMedium power amplifier and switch requiring collector currents up t

2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit60 VCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO Emitter Base Vol

2N4402 / 2N4403 PNP Epitaxial Silicon Transistor General purpose transistor On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 40 VEmitter Base Voltage

SEMICONDUCTOR2N4403TECHNICAL DATAGeneral Purpose TransistorsPNP SiliconORDERING INFORMATION3Device Marking Shipping22N4403LT1G 2T 3000/Tape & Reel1SOT23MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage V CEO 40 Vdc3CollectorBase Voltage V CBO 40 VdcCOLLECTOREmitterBase Voltage V EBO 5.0 VdcCollector Current Cont

SEMICONDUCTOR2N4401TECHNICAL DATAGeneral Purpose TransistorORDERING INFORMATIONDevice Marking Shipping32N4401 2X 3000/Tape & Reel21MAXIMUM RATINGSSOT23Rating Symbol Value UnitCollectorEmitter Voltage V 40 VdcCEOCollectorBase Voltage V 60 VdcCBOEmitterBase Voltage V 6.0 VdcEBO3COLLECTORCollector Current Continuous I 600 mAdcC1BASE

SMD Type TransistorsNPN Transistors2N4401TO-92Unit: mm+0.254.58 0.15 Features Collector Current Capability IC=0.6A Collector Emitter Voltage VCEO=40V0.46 0.10+0.101.27TYP 1.27TYP 0.38 0.051 2 3[1.27 0.20] [1.27 0.20]3.60 0.201. Emitter2. Base(R2.29)3. Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

isc Silicon NPN Power Transistor 2N4401DESCRIPTIONWith TO-92 packagingVery high DC current gainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectronic ignitionAlternator regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emi