MMBT2369R Datasheet. Specs and Replacement

Type Designator: MMBT2369R  πŸ“„πŸ“„ 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 200 Β°C

Electrical Characteristics

Transition Frequency (ft): 500 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO236

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MMBT2369R datasheet

 6.1. Size:304K  motorola

mmbt2369.pdf pdf_icon

MMBT2369R

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2369LT1/D MMBT2369LT1 Switching Transistors COLLECTOR * MMBT2369ALT1 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 Collector Emitter Voltage VCEO 15 Vdc 2 Collector Emitter Voltage VCES 40 Vdc Collector Base Voltage VCBO 40 Vdc CASE 318 08, STYL... See More ⇒

 6.2. Size:49K  fairchild semi

mmbt2369.pdf pdf_icon

MMBT2369R

MMBT2369 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21. C E SOT-23 B Mark 1J Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.5 V ... See More ⇒

 6.3. Size:121K  fairchild semi

mmbt2369 pn2369.pdf pdf_icon

MMBT2369R

February 2008 MMBT2369 / PN2369 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21. MMBT2369 PN2369 C E SOT-23 B TO-92 1 Mark 1J 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emit... See More ⇒

 6.4. Size:749K  fairchild semi

pn2369a mmbt2369a.pdf pdf_icon

MMBT2369R

PN2369A MMBT2369A C E C TO-92 B SOT-23 B E Mark 1S NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Vo... See More ⇒

Detailed specifications: MMBT2221R, MMBT2222, MMBT2222A, MMBT2222AR, MMBT2222R, MMBT2369, MMBT2369ALT1, MMBT2369LT1, A1013, MMBT2484, MMBT2484LT1, MMBT2484R, MMBT2894, MMBT2894R, MMBT2904, MMBT2904A, MMBT2905

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