MMBT3642 Datasheet. Specs and Replacement
Type Designator: MMBT3642 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO236
MMBT3642 Substitution
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MMBT3642 datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT3640LT1/D Switching Transistor MMBT3640LT1 COLLECTOR PNP Silicon 3 Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 12 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 12 Vdc SOT 23 (TO 236AB) Emitter Base Voltage V... See More ⇒
MMBT3646 Switching Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCES Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5 IC Collector Current (DC) - Continuous 300 mA PD Total Device Dissipation @ TA=25 C 625 ... See More ⇒
PN3640 MMBT3640 C E TO-92 C B B SOT-23 E Mark 2J PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 12 V VCBO Collector-Base Voltage... See More ⇒
Detailed specifications: MMBT3568, MMBT3569, MMBT3638, MMBT3638A, MMBT3639, MMBT3640, MMBT3640LT1, MMBT3641, BC547, MMBT3643, MMBT3644, MMBT3645, MMBT3646, MMBT3691, MMBT3692, MMBT3693, MMBT3694
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