2N4412A Specs and Replacement
Type Designator: 2N4412A
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO5
2N4412A Substitution
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2N4412A datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4410/D Amplifier Transistor NPN Silicon 2N4410 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 80 Vdc Collector Base Voltage VCBO 120 Vdc Emitter Base Voltage VEBO 5.0 Vdc Collector Current Continuou... See More ⇒
Discrete POWER & Signal Technologies 2N4410 C TO-92 B E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V V ... See More ⇒
2N4416/2N4416A/SST4416 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N4416 -v6 -30 4.5 5 2N4416A -2.5 to -6 -35 4.5 5 SST4416 -v6 -30 4.5 5 FEATURES BENEFITS APPLICATIONS D Excellent High-Frequency Gain D Wideband High Gain D High-Frequency Amplifier/Mixer 2N4416/A, Gps 13 dB (typ) @ D Very High System Sensitiv... See More ⇒
Detailed specifications: 2N4406, 2N4407, 2N4409, 2N440A, 2N441, 2N4410, 2N4411, 2N4412, 2SC4793, 2N4413, 2N4413A, 2N4414, 2N4414A, 2N4415, 2N4415A, 2N4418, 2N4419
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History: 2N4396 | 2N4900 | 2N4410 | 2N4390 | 2N439 | 2N441 | 2N4412
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