2N442 Specs and Replacement
Type Designator: 2N442
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 30 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 95 °C
Electrical Characteristics
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO36
2N442 Substitution
- BJT ⓘ Cross-Reference Search
2N442 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors 1995 Oct 27 Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a Philips Semiconductors Product specification Silicon planar epitaxial 2N3866; 2N4427 overlay transistors DESCRIPTION APPLICATIONS NPN overlay transistors in TO-39 metal packages wi... See More ⇒
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
Detailed specifications: 2N4413, 2N4413A, 2N4414, 2N4414A, 2N4415, 2N4415A, 2N4418, 2N4419, BD135, 2N4420, 2N4421, 2N4422, 2N4423, 2N4424, 2N4425, 2N4426, 2N4427
Keywords - 2N442 pdf specs
2N442 cross reference
2N442 equivalent finder
2N442 pdf lookup
2N442 substitution
2N442 replacement
