MMT807 Datasheet and Replacement

   Type Designator: MMT807
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 8 V
   Maximum Collector-Emitter Voltage |Vce|: 5 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 135 °C
   Transition Frequency (ft): 1200 MHz
   Collector Capacitance (Cc): 0.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: X41
      - BJT Cross-Reference Search