All Transistors. 2N4420 Datasheet

 

2N4420 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N4420
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 350 MHz
   Collector Capacitance (Cc): 5 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -

 2N4420 Transistor Equivalent Substitute - Cross-Reference Search

   

2N4420 Datasheet (PDF)

 9.1. Size:353K  rca
2n442.pdf

2N4420

 9.2. Size:45K  philips
2n3866 2n4427.pdf

2N4420 2N4420

DISCRETE SEMICONDUCTORSDATA SHEET2N3866; 2N4427Silicon planar epitaxialoverlay transistors1995 Oct 27Product specificationSupersedes data of August 1986File under Discrete Semiconductors, SC08aPhilips Semiconductors Product specificationSilicon planar epitaxial2N3866; 2N4427overlay transistorsDESCRIPTION APPLICATIONSNPN overlay transistors in TO-39 metal packages wi

 9.3. Size:132K  st
2n4427 bfr98.pdf

2N4420 2N4420

 9.4. Size:59K  central
2n4427.pdf

2N4420

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.5. Size:74K  central
2n4424.pdf

2N4420 2N4420

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.6. Size:94K  no
2n4424.pdf

2N4420 2N4420

 9.7. Size:14K  advanced-semi
2n4429.pdf

2N4420

2N4429 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI 2N4429 is Designed for A 45Class C Amplifier Applications Up to 1,000 MHz. B FEATURES: C D PG = 7.5 dB Typ. at 1.0 W/1000 MHz JE I Emitter Ballasting for Ruggedness F Omnigold Metallization System GH#8-32 UNCKMAXIMUM RATINGS MINIMUM MAXIMUMDIMin

 9.8. Size:28K  advanced-semi
2n4428.pdf

2N4420

2N4428NPN SILICON HIGH FREQUENCY TRANSISTORPACKAGE STYLE TO-39DESCRIPTION:The 2N4428 is a High FrequencyTransistor Designed for Amplifier andOscillator Applications.MAXIMUM RATINGS IC 425 mAVCE 30 VPDISS 3.5 W @ TC = 25 OC TJ -65 OC to +200 OCTSTG -65 OC to +200 OC 1 = EMITTER 2 = BASE3 = COLLECTOR50 OC/WJCNONECHARACTERISTICS TC = 25 OCSYMBOL TE

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top