MMUN2112LT2 Specs and Replacement
Type Designator: MMUN2112LT2
SMD Transistor Code: A6B
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SOT23
MMUN2112LT2 Substitution
- BJT ⓘ Cross-Reference Search
MMUN2112LT2 datasheet
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMUN2111LT1/D Bias Resistor Transistor MMUN2111LT1 PNP Silicon Surface Mount Transistor with SERIES Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a s... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMUN2111LT1/D Bias Resistor Transistor MMUN2111LT1 PNP Silicon Surface Mount Transistor with SERIES Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a s... See More ⇒
Detailed specifications: MMT807, MMT808, MMT809, MMT918, MMT930, MMUN2111LT1, MMUN2111LT2, MMUN2112LT1, C5198, MMUN2113LT1, MMUN2113LT2, MMUN2114LT1, MMUN2114LT2, MMUN2115LT1, MMUN2115LT2, MMUN2116LT1, MMUN2116LT2
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