MP110O Datasheet, Equivalent, Cross Reference Search
Type Designator: MP110O
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 106 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 110 °C
Transition Frequency (ft): 0.16 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO3
MP110O Transistor Equivalent Substitute - Cross-Reference Search
MP110O Datasheet (PDF)
9.1. Size:452K diodes
dmp1100ucb4.pdf
dmp1100ucb4.pdf
DMP1100UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ @VGS = -4.5V, TA = +25C) Features and Benefits Built-in G-S Protection Diode against ESD 2kV HBM BVDSS RDS(ON) Qg Qgd ID Ultra Small 0.8mm x 0.8mm Package -12V 65m 9nC 2.4nC -3.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
